Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

材料科学技术（英）, 2012, 28(4): 329-335.

Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

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1.Department ofPhysics, University of Rajshahi, Rajshahi 6205, Bangladesh

2.Department ofPhysics, University of Rajshahi, Rajshahi 6205, Bangladesh

3.Department ofPhysics, University of Rajshahi, Rajshahi 6205, Bangladesh

4.Department ofPhysics, University of Rajshahi, Rajshahi 6205, Bangladesh

5.Department ofPhysics, University of Rajshahi, Rajshahi 6205, Bangladesh

6.Materials Science Division, Atomic Energy Centre,Dhaka, Bangladesh

7.Materials Science Division, Atomic Energy Centre,Dhaka, Bangladesh

8.Industrial Physical Division, BCSIR, Dhaka, Bangladesh

基金项目: Acknowledgements Authors gratefully acknowledged BCSIR and AEC, Dhaka, Bangladesh for facilitating SEM and XRD measurements

关键词：氧化锌薄膜 , 光致发光性质 , 纳米结构 , Al掺杂 , 光学带隙 , 光致发光特性 , 电子显微镜 , 电气

Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

Keywords： Thin film , Nano-structure , ZnO , Surface morphology , Photolumlnescence ,

The nano-structural Al-doped ZnO thin films of different morphologies deposited on glass substrate were successfully fabricated at substrate temperature of 350 ℃ by an inexpensive spray pyrolysis method. The structural, electrical, optical and photoluminescence properties were investigated. X-ray diffraction study revealed the crystalline wurtzite (hexagonal) structure of the films with nano-grains. Scanning electron microscopy (SEM) micrographs indicated the formation of a large variety of nano-structures during film growth. The spectral absorption of the films occurred at the absorption edge of -410 nm. In the present study, the optical band gap energy 3.28 eV of ZnO decreased gradually to 3.05 eV for 4 mol% of AI doping. The deep level activation energy decreased and carrier concentrations increased substantially with increasing doping. Exciting with the energy 3.543 eV (A=350 nm), a narrow and a broad characteristic photoluminescence peaks that correspond to the near band edge (NBE) and deep level emissions (DLE), respectively emerged.

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材料期刊网

Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

参考文献