采用通常的固相反应工艺制备了Gd2(WO4)3陶瓷,在低场(E＜150 V/mm)下测试了样品的电学行为和介电常数随温度的变化.结果表明:随温度的升高,样品首先呈现出线性的Ohm特征,在250℃以后开始呈现出半导体特征下的非线性电学行为,并且这种非线性随温度的升高而增大;样品的介电常数和损耗因子在320℃～350℃有明显的变化.XRD分析表明:样品中存在Gd2(WO4)3主晶相和W20O58次晶相.用WO3的相变可以简单解释上述实验结果.
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