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本文采用密度泛函第一性原理的理论计算方法,研究了二元化合物半导体ZnS(Se、Te)的电子能带结构、弹性及光学性质.计算得到的弹性相关的物理量如弹性常数和实验值符合较好.低温下ZnS、ZnSe和ZnTe的德拜温度分别为274.725 K、220.466 K和162.165 K,随阴离子半径的增大,德拜温度呈减小趋势.ZnS、ZnSe和ZnTe的静态介电常数ε1(0)分别为4.71、5.58和7.18.在低能区,介电函数实部随入射光子能量的增加而增加,ZnTe的介电常数值达到最大值(13.78)时对应的光子能量最小(3.61 eV).ZnS、ZnSe和ZnTe的静态折射率分别为2.17、2.36和2.68.在外场作用下,这三者的折射率最大值分别为nZaS(7028 eV)=3.57、nZnSe(6.60 eV) =3.56和nZnTe (3.69 eV)=3.82.通过吸收系数图谱拟合出ZnS(Se、Te)的吸收边分别为3.7953 eV、2.9329 eV和2.48765eV,与实验值非常接近.

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