InP Bulk Crystals Grown from Various Stoichiometric Melt

稀土学报(英文版), 2006, 24(z1): 100-103.

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1.China Electronic Technology Group Corporation, Beijing 100846, China

2.School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China

3.School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

4.China Electronic Technology Group Corporation, Beijing 100846, China

5.National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

6.National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

基金项目: 国家自然科学基金(60276008)

InP Bulk Crystals Grown from Various Stoichiometric Melt

Keywords： indium phosphide

InP crystal was grown from stoichiometric or non-stoichiometric melt, including P-rich and In-rich condition by the P-injection synthesis LEC method. Owing to the non-stoichiometric condition, there are many pores in the tail of the P-rich ingot. Samples were characterized by high speed photoluminescence mapping and E.P.D. mapping. The perfection (dislocation, stoichiometry and uniformity) of these samples were studied and compared. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are higher than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them are the leading factors causing the inhomogeneity of the wafer. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and better performance can be developed.

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InP Bulk Crystals Grown from Various Stoichiometric Melt

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