采用等离子体源离子渗氮，即低能（1-3keV）、超大剂量（1019～1020ions．cm-2）氮离子注入-同步热扩散技术，在300～500℃处理碳化硼薄膜，合成了硼碳氮三元薄膜．俄歇电子能谱和漫反射富氏变换红外光谱分析表明，合成的硼碳氮薄膜是碳硼比固定，氮含量可控的非晶态薄膜．300℃渗氮的薄膜由sp~2型的硼、碳、氮微区构成，而500℃渗氮的薄膜则由sp3和sp2型复合的微区组成．较高的渗氮工艺温度促进sP3型结构的形成，渗氮工艺时间对薄膜结构的影响不显著．
An amorphous boron-carbon-nitrogen film was synthesized by plasma source ion nitriding, that is nitrogen ion implantation at low energy (1～3 keV) and superhigh dose
(1019～1020 ions·cm-2) and simultaneously indiffusion. Auger electron spectroscopy and diffuse reflectance Fourier transform
infrared spectra showed that the films are mainly composed of sp2 and sp3 plain (graphite- and pyridine-like) microdomains
with a fixed B/C ratio and a controllable nitrogen content at a nitriding temperature of 500℃ for a nitriding time from 2 to 6 h. The formation of sp3 plain microdomains strongly depends
on the nitriding temperature and softly on the nitriding time.
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