The ac impedance of Nb-doped semiconducting(BaO.72PbO.28)TiO3 ceramics implanted with copper ions(200keV,6×1015 and 1×1017 ions/cm2) in the temperature range 25-320℃ and the frequency range 10 Hz-13MHz was measured.According to the change of impedance spectroscopy and the equivalent circuit model of semiconducting(Ba,Pb)TiO3 ceramics,the dependence of resistance of bulk and grain-boundary on temperature was analyzed.The results show that relatively low dose must be used to increase the magnitude of the positive temperature coeffieient of resistance(PTCR)effects in the cermmics.In addition,the effects of Cu ion implantation on the PTCR behavior of the ceramics was studied by rasistance-temperature measurement.
参考文献
| [1] | W Heywang .Barium Titanate as a Semicoductor with Blocking Layers[J].Solid-State Electronics,1961,3(01):51-58. |
| [2] | G H Jorker .Some Aspects of Semiconducting Barium Titanate[J].Solid-State Electronics,1964,7:895-903. |
| [3] | G T Mallick;P R Emtage .Current-Voltage Characteristies of Semiconducting Barium Titanate Ceramics[J].Journal of Applied Physiology,1968,39:3088-3094. |
| [4] | C A Miller .Potential Barrier on Semiconducting BaTiO3[J].Journal of Physics D:Applied Physics,1971,4:690-694. |
| [5] | D Y Wang;K Umeya .Spontaneous Polarization Screening Effect ,Trap-state Density of Grain Boundaries of Semiconducting Barium Titanate Ceramics[J].Journal of the American Ceramic Society,1991,74(02):280-286. |
| [6] | B S chiou;S T Lin;J G Duh et al.Equlvlent Ci" size="3"》Duh ,et al.Equlvlent Circuit Model in Grain-Boundary Barrier Layer Capacitors[J].Journal of the American Ceramic Society,1989,72(10):1967-1975. |
| [7] | D Y Wang;K Umeya .Electrical Properties of PTCR Barium Titanate[J].Journal of the American Ceramic Society,1990,73(03):669-677. |
| [8] | Z Z Huang;H M Lu;H J Li et al.Preparation of PTC Ceramic Material of Over-cruuent Limiter for Program-controlled Telephone Exchanger[J].Journal of Inorganic Materials,1996,11:78-84. |
| [9] | S B Ogale;S M Kanetkar .Ion Implantation in Pulsed-laser-deposited Barium-titanate Thin Films on Silicon[J].Nuclear Instruments and Methods in Physics Research,1991,B59-60:1350-1354. |
| [10] | G M Davis;M C Gower .Epitaxial Growth of Thin Films of BatiO3 Using Exeimer Laser Ablation[J].Applied Physics Letters,1989,55:112-114. |
| [11] | R N Basu;H S Matti.Study of Semiconducting Barium Titanate by Impedance measurement[A].Amsterdam Netherlands,1987:1883-1894. |
| [12] | J R Maedonald .Simplified Impedancel Frequency-response Results for Intrinsically Conducting Soilds[J].Liquids J Chem Phys,1974,61(10):3977-3996. |
| [13] | J Illingsworth;H M Al-Allak;A W Brinkman et al.The Influence of Mn on the Grain-Boundary Potential Barrier Characteristics of Donor-Doped BaTiO3 Ceramics[J].Journal of Applied Physiology,1990,67(04):2088-2092. |
| [14] | D C Sinclair;A R West .Impedance ,Modulus Spectroscopy of Semiconducting BaTiO3 showing Positive Temperature Coefficient of Resistance[J].Journal of Applied Physiology,1989,66(08):3850-3856. |
| [15] | N Hirose;A R West .Impedance Spectroscopy of Undoped BaTiO3 Ceramies[J].Journal of the American Ceramic Society,1996,79(06):1633-1941. |
| [16] | J E Baurle .Study of Solid Electrolyte Polarizations by a Complex Admittance Method[J].Journal of Physics and Chemistry of Solids,1969,30:2657-2670. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%