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为了满足微波器件小型化的需要,开发高介电常数的低温烧结微波介质材料成为一种趋势.采用复合掺杂低熔点氧化物来降低BaO-Sm_2O_3-TiO_2系(BST)微波介质陶瓷的烧结温度,通过X射线衍射和扫描电子显微镜分析其物相组成和显微结构,用阻抗分析仪测量了陶瓷材料的介电性能.结果表明:在Ba_4(Sm_(1-0.15)Bio_(0.15))_(28/3)T_(1.8) O_(54)的基质陶瓷材料中,复合掺杂3%的ZnO和2%的B_2O_3时,其烧结温度为1060℃,得到的BST微波介质陶瓷的介电性能为:εr≈64,tanδ≈1.2×10~(-3),t_f=-8.3×10~(-5)/℃.

To develop the ceramic material with low-temperature sintering and high-ε microwave dielectric to fulfill the miniaturization of microwave ceramic capacitors, low melting point oxides were added into BaO -Sm_2O_3 -TiO_2(BST) microwave dielectric ceramics to decrease the sintering temperature. The phase composition and microstructure of the ceramics were examined by X-ray diffraction radiation and scanning electron microscope, respectively. The dielectric property was measured by an impedance analyzer. Results indicated that, in Ba_4(Sm_(1-0.15)Bi_(0.15))_(28/3)T_(18)O_(54) system, the sintering temperature was 1060 ℃ when the adding content of ZnO and B_2O_3 was 3wt% and 2wt% , respectively. The performance of BST microwave dielectric ceramics was listed as follows : ε r≈64,tanδ≈1.2×10-3,t_f=-8.3×10~(-5)/℃.The ceramic material would be a promising candidate for microwave resonators and filters.

参考文献

[1] 陈国华.微波介质陶瓷及其低温烧结研究进展[J].中国陶瓷工业,2004(05):41-44,51.
[2] 赵梅瑜,王依琳.低温烧结微波介质陶瓷[J].电子元件与材料,2002(02):30-33,39.
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[5] 黄智恒,贾德昌,杨治华,周玉.碳化硅陶瓷的活化烧结与烧结助剂[J].材料科学与工艺,2004(01):103-107.
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