采用MOCVD制备了带有MN插入层AlGaN/GaN异质结构外延材料,对外延材料分别进行了原子力显微镜AFM、双晶XRD以及变温HALL测试.测试结果表明:具有AlN插入层的外延材料表面非常平整,10 μm × 10 μm范围样品的表面均方根粗糙度RMS仅为0.302 nm,AlGaN势垒层衍射峰更尖锐,材料结构特性良好,大大提高了AlGaN/GaN异质结的2DEG面密度和迁移率,280 K和300 K时沟道电子迁移率分别为4736 cm2/V·s和1785 cm2/V·s,比无MN插入层的传统结构得到的结果分别提高了45.7％和23.4％.
参考文献
| [1] | Wang CM;Wang XL;Hu GX;Wang JX;Li HP;Wang ZG .Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(2):762-765. |
| [2] | 倪金玉,郝跃,张进成,段焕涛,张金风.高温AlN插入层对AlGaN/GaN异质结材料和HEMTs器件电学特性的影响[J].物理学报,2009(07):4925-4930. |
| [3] | Wang XL;Wang CM;Hu GX;Mao HL;Fang CB;Wang JX;Ran JX;Li HP;Li JM;Wang ZG .MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate[J].Journal of Crystal Growth,2007(0):791-793. |
| [4] | Ma ZY;Wang XL;Hu GX;Ran JX;Xiao HL;Luo WJ;Tang J;Li JP;Li JM .Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer[J].Chinese physics letters,2007(6):1705-1708. |
| [5] | Baishakhi Mazumder;Stephen W. Kaun;Jing Lu;Stacia Keller;Umesh K. Mishra;James S. Speck .Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures[J].Applied physics letters,2013(11):111603-1-111603-5. |
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