中国有色金属学报, 2004, 14(11): 1889-1894.
真空热处理对Ti6Al4V基体/NiCrAlY涂层体系组织结构及元素扩散行为的影响
李佳 1, , 夏长清 {"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用Nd-YAG激光器对采用物理气相沉积PVD方法制备的非晶态SnSeSbTm薄膜材料进行了激光晶化处理,晶化后TEM表明,薄膜材料由非晶态结构转变成晶态结构,实现了由非晶态到晶态的相变;从相变机理角度阐述了成分差异对相变程度的影响.","authors":[{"authorName":"陈卓","id":"a41c2e0e-e081-4de4-b80e-33a63415bcc5","originalAuthorName":"陈卓"},{"authorName":"刘喜明","id":"8fe2271b-3760-46ad-b95e-6fc789e8cafa","originalAuthorName":"刘喜明"},{"authorName":"王佳玲","id":"5a495662-7657-433d-a8f9-f1ed984ee0a3","originalAuthorName":"王佳玲"}],"doi":"","fpage":"112","id":"bbc82d21-99ad-4374-bbc7-348c92632259","issue":"1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"8e15d760-9e19-4328-8d4f-11954b0ea201","keyword":"激光致晶化","originalKeyword":"激光致晶化"},{"id":"94d2f603-6233-4d46-a60b-3164f5f01e38","keyword":"相变光盘","originalKeyword":"相变光盘"},{"id":"4371d75c-7268-47ae-839b-a147f7e4ccb3","keyword":"激光辐照度","originalKeyword":"激光辐照度"}],"language":"zh","publisherId":"cldb200501033","title":"激光致晶化非晶态SnSeSbTm薄膜材料的研究","volume":"19","year":"2005"},{"abstractinfo":"采用低频脉冲磁场对非晶合金Fe73.5Cu1Nb3Si13.5B9进行处理,用穆斯堡尔谱和透射电子显微镜分析了脉冲磁场处理前后非晶合金样品的微结构.结果表明,脉冲磁场处理致非晶合金在室温下发生了初始纳米晶化.利用交变梯度磁强计、自制磁致伸缩系数测量仪测量低频脉冲磁场处理前后样品的矫顽力Hc、饱和磁化强度Ms、起始磁导率μi和磁致伸缩系数λ.结果显示,低频脉冲磁场处理后样品的μi整体增大,Hc、λs总体低于制备态非晶合金,这表明低频脉冲磁场处理优化了非晶合金的综合软磁性能,样品软磁性优化程度与脉冲磁场处理参数有关,脉冲频率f=30 Hz、作用时间t=4 min不变,脉冲磁场强度Hp=250×79.6 A/m处理参数下,样品的软磁性能最佳.","authors":[{"authorName":"郭红","id":"879da5cf-1c73-45b6-9b56-702e33f788aa","originalAuthorName":"郭红"},{"authorName":"晁月盛","id":"6754f685-aba6-40ce-8131-3559dbe1b494","originalAuthorName":"晁月盛"},{"authorName":"张雷","id":"c5b99ec3-13d5-47f8-a3ac-2fb69fc3ebf1","originalAuthorName":"张雷"}],"doi":"","fpage":"1236","id":"c513222c-40c1-4e16-a0d3-2f64415b588b","issue":"6","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"08240586-75c7-4605-bd86-5dd9428fde53","keyword":"低频脉冲磁场","originalKeyword":"低频脉冲磁场"},{"id":"1e956e93-f82f-4205-b49e-9f341dd433bf","keyword":"纳米晶化","originalKeyword":"纳米晶化"},{"id":"aaaa2501-96c0-4035-a8a9-1f93a902760b","keyword":"饱和磁致伸缩系数","originalKeyword":"饱和磁致伸缩系数"}],"language":"zh","publisherId":"xyjsclygc201306029","title":"磁致非晶合金纳米晶化及软磁性的优化","volume":"42","year":"2013"},{"abstractinfo":"用TEM和穆斯堡尔技术研究了非晶Fe78Si9B13合金磁致晶化结构及晶化与脉冲磁场参数的关系,并粗略研究了非晶合金纳米晶化机制.结果表明:脉冲磁场作用产生的磁致伸缩能降低了非晶合金的形核势垒,使非晶合金得以纳米晶化.因为量子尺寸效应,试样电阻显现复杂性.","authors":[{"authorName":"郭红","id":"5fb6373c-76e1-4596-b1de-326266256069","originalAuthorName":"郭红"},{"authorName":"晁月盛","id":"71e25507-12ed-4123-89be-a267d03f5531","originalAuthorName":"晁月盛"}],"doi":"10.3969/j.issn.1000-3738.2004.03.014","fpage":"40","id":"95358f38-d76a-4948-9629-516461566e1e","issue":"3","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"998da2f8-703c-45f8-9535-33491ae61d8e","keyword":"非晶合金","originalKeyword":"非晶合金"},{"id":"5343d1b9-f862-4b3b-86b2-af32a8688922","keyword":"纳米晶化","originalKeyword":"纳米晶化"},{"id":"7f0d12d4-2b76-4cc9-8905-d46f05c4d2a8","keyword":"脉冲磁场","originalKeyword":"脉冲磁场"},{"id":"ffa04a2b-0be1-45ac-ab41-873574956445","keyword":"比电阻","originalKeyword":"比电阻"}],"language":"zh","publisherId":"jxgccl200403014","title":"低频脉冲磁场致非晶合金Fe78Si9B13纳米晶化及机制","volume":"28","year":"2004"},{"abstractinfo":"采用PECVD工艺在普通玻璃衬底上制备非晶硅薄膜,用波长为532nm的倍频Nd:YAG激光对非晶硅薄膜的表层进行了晶化.研究了激光能量密度对非晶硅薄膜表面结晶度以及晶粒大小的影响,并对晶化后的非晶硅表面形貌进行了表征.研究结果表明:该非晶硅薄膜晶化的阈值能量密度为800 mJ/cm2,当激光能量密度大于该值时,晶化效果反而变差.同时经过拉曼光谱表征,经由高斯拟合和数值计算得出薄膜结晶度在45%～60%之间,平均晶粒尺寸在30～50nm.","authors":[{"authorName":"陈盛","id":"5053e849-1857-4bf8-b09e-ad2511b90ec8","originalAuthorName":"陈盛"},{"authorName":"史伟民","id":"5173c984-1bb3-4260-a651-722345c1de7a","originalAuthorName":"史伟民"},{"authorName":"金晶","id":"a500b183-83f5-4ffe-9d17-8dbfcb3b200d","originalAuthorName":"金晶"},{"authorName":"秦娟","id":"cbb5e2ff-3b53-4405-97f9-3df09cb40cae","originalAuthorName":"秦娟"},{"authorName":"王漪","id":"67ac39f5-4aba-4361-afd1-41085b83c476","originalAuthorName":"王漪"},{"authorName":"夏义本","id":"2a53ccce-f2d5-4955-8507-782781cceacd","originalAuthorName":"夏义本"}],"doi":"10.3969/j.issn.1007-4252.2010.06.009","fpage":"565","id":"0f123129-ab6c-4166-aa90-c7f840b4aa1f","issue":"6","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"c58740e9-abd5-43bd-989a-0eecff296800","keyword":"等离子体化学气相沉积","originalKeyword":"等离子体化学气相沉积"},{"id":"b2449a0d-a290-48e3-8882-9fb6d23cd682","keyword":"激光晶化","originalKeyword":"激光晶化"},{"id":"ee5de3b9-cf89-42c2-b2dd-bd39bfbfe801","keyword":"纳米硅","originalKeyword":"纳米硅"}],"language":"zh","publisherId":"gnclyqjxb201006009","title":"激光晶化非晶硅薄膜的表面机理研究","volume":"16","year":"2010"},{"abstractinfo":"采用脉冲激光烧蚀技术,在真空条件下沉积了一系列非晶Si薄膜,并对薄膜样品进行不同能量密度的激光退火处理.通过扫描电子显微镜(SEM)、X射线衍射仪(XRD)、Raman散射仪(Raman)等手段对退火后的薄膜进行形貌、晶态成分表征,确定了非晶Si薄膜晶化的激光能量密度阈值(85 mJ/cm2).结合激光晶化机理进行定量计算.结果显示:形成一个18 nm的Si晶粒所需要的能量,即成核势垒大小约为1.4×10-9 mJ.","authors":[{"authorName":"邓泽超","id":"7185573d-71bc-4537-abe3-1437db0ff246","originalAuthorName":"邓泽超"},{"authorName":"褚立志","id":"bc11d7e1-8f14-4baa-b170-75867c119ee7","originalAuthorName":"褚立志"},{"authorName":"丁学成","id":"fe1d3f1c-c26a-4e40-b96a-a5e1f0c51cb5","originalAuthorName":"丁学成"},{"authorName":"梁伟华","id":"12185b5b-757c-4ae2-8302-984a7b9e0458","originalAuthorName":"梁伟华"},{"authorName":"傅广生","id":"df19b883-337d-4a0b-8a38-55d73efe8cbc","originalAuthorName":"傅广生"},{"authorName":"王英龙","id":"4ac61253-656a-4f0b-837e-907aaec2011c","originalAuthorName":"王英龙"}],"doi":"","fpage":"876","id":"c0983c9b-284b-43a1-9de0-27020a70b568","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"8d4179a5-a58c-4dcc-a717-ef3b5d01e962","keyword":"脉冲激光烧蚀","originalKeyword":"脉冲激光烧蚀"},{"id":"27dcf33d-782b-4181-93ab-4867bff11a0e","keyword":"激光退火","originalKeyword":"激光退火"},{"id":"1b18d8bd-88bc-4e7d-80f0-26ee13fcd9a4","keyword":"成核势垒","originalKeyword":"成核势垒"}],"language":"zh","publisherId":"rgjtxb98200904015","title":"激光退火实现非晶Si晶化的成核势垒研究","volume":"38","year":"2009"},{"abstractinfo":"对Co68.15Fe4.35Si12.5BI5非晶合金薄带进行低频脉冲磁场处理,Mossbauer谱分析及透射电镜(TEM)观察结果表明,样品发生了初始纳米晶化,晶化量与磁脉冲强度有关.采用巨磁阻抗(简称GMD)测量仪测量样品GMT,结果显示GMT与脉冲磁场强度Hp呈非单调变化规律,Hp为350kA·m(-1)时样品具有最大GMI,其值为263.5%.磁脉冲在样品内感生的横向各向异性对GMI效应产生影响,当外加直流磁场Hex等于感生磁各向异性场Hk时,GMI出现峰值.","authors":[{"authorName":"郭红","id":"0106cdeb-ecfa-400e-a360-db9cbf9d9256","originalAuthorName":"郭红"},{"authorName":"晁月盛","id":"5c5b2796-d9b9-41e0-a817-ca20cf85d307","originalAuthorName":"晁月盛"},{"authorName":"金莹","id":"2ef54da2-af80-42e7-a488-45e507f2bea2","originalAuthorName":"金莹"}],"doi":"","fpage":"1163","id":"a8a08b5c-63c5-4fea-b6f5-43dc77b85497","issue":"7","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"1ea77a9e-5df7-43a7-9bbb-46094a3df78b","keyword":"低频脉冲磁场","originalKeyword":"低频脉冲磁场"},{"id":"8f6e9474-9408-46be-9516-d153b253b67b","keyword":"非晶合金纳米晶化","originalKeyword":"非晶合金纳米晶化"},{"id":"bad320ce-1298-403d-b651-8fd3542bfecc","keyword":"巨磁阻抗效应","originalKeyword":"巨磁阻抗效应"}],"language":"zh","publisherId":"xyjsclygc201107008","title":"脉冲磁场致非晶合金纳米晶化及巨磁阻抗研究","volume":"40","year":"2011"},{"abstractinfo":"采用脉冲激光焊接技术成功实现FeSiB非晶带材的搭接,并通过热处理方法分析接头晶化行为.利用扫描电子显微镜SEM、X射线衍射仪XRD、差示扫描热仪DSC和透射电镜TEM等研究不同功率对激光焊缝成形、组织特征及晶化行为的影响.结果表明:当功率低于4.8 W时,焊缝表面粗糙、熔宽小;当功率高于9.6 W时,焊缝存在微裂纹;当功率为7.2W时,焊缝成形良好,未见焊接缺陷.随着功率的增加,接头抗拉强度先升高后降低,最高拉伸强度为410 MPa,断裂方式为解理断裂;接头组织主要由非晶相、树枝晶、白色颗粒状的结晶相组成;接头晶化过程中先析出 α-Fe(Si)相,再析出Fe2B相.","authors":[{"authorName":"龚玉兵","id":"1d1c19b5-f5b4-45c5-bea0-ecce5af3ca4a","originalAuthorName":"龚玉兵"},{"authorName":"王善林","id":"401a13b0-10c8-4309-8192-7b2acd04fc6e","originalAuthorName":"王善林"},{"authorName":"李宏祥","id":"0359165d-d8df-44ad-b610-b02727f79d92","originalAuthorName":"李宏祥"},{"authorName":"张子阳","id":"50df22ac-adb9-4f0a-9679-f508849bae06","originalAuthorName":"张子阳"},{"authorName":"陈玉华","id":"0a156747-ad60-484e-890e-916b467da8aa","originalAuthorName":"陈玉华"}],"doi":"10.19476/j.ysxb.1004.0609.2017.05.007","fpage":"927","id":"3a1fbc4c-8bd1-4951-910c-d47f6d5b7602","issue":"5","journal":{"abbrevTitle":"ZGYSJSXB","coverImgSrc":"journal/img/cover/ZGYSJSXB.jpg","id":"88","issnPpub":"1004-0609","publisherId":"ZGYSJSXB","title":"中国有色金属学报"},"keywords":[{"id":"e97b7e10-8525-456e-a7fa-5744691b90c4","keyword":"FeSiB非晶带材","originalKeyword":"FeSiB非晶带材"},{"id":"77d6238d-23ee-4bdd-afed-05bb2dc333e8","keyword":"激光焊接","originalKeyword":"激光焊接"},{"id":"53d99db5-bd78-49b1-92e0-65c30b233d22","keyword":"晶化行为","originalKeyword":"晶化行为"},{"id":"fa964ea7-1ae8-4517-afe5-d9100c60b393","keyword":"显微组织","originalKeyword":"显微组织"}],"language":"zh","publisherId":"zgysjsxb201705007","title":"FeSiB非晶薄带激光焊接头组织及晶化行为","volume":"27","year":"2017"},{"abstractinfo":"用低频脉冲磁场处理非晶Fe78Si9B13合金,在低温下发生了纳米晶化,利用M?ssbauer谱和LDJ9600震动样品磁强计进行了微结构和磁性分析.借助于固体与分子经验电子理论中的BLD方法,计算了非晶Fe78Si9B13合金磁致低温纳米晶化前后的价电子结构,并算出了磁矩,其理论计算值与实验测定值的误差小于7%,满足一级近似要求,说明从价电子层次上计算非晶合金的磁矩是可以实现的.","authors":[{"authorName":"周迎春","id":"86e3f33a-81c7-4f63-bd1a-1738717d91f3","originalAuthorName":"周迎春"},{"authorName":"张群","id":"ab8489a8-904e-430f-a0da-fa1105ef2797","originalAuthorName":"张群"},{"authorName":"晁月盛","id":"40a80a14-90eb-445a-aaea-1f8f5907560a","originalAuthorName":"晁月盛"}],"doi":"","fpage":"1791","id":"e39edaf3-9d13-4e51-9b3e-133bfe50798b","issue":"10","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"34f8c0a0-aa16-4471-9555-f0d866a5ac1e","keyword":"非晶Fe78Si9B13合金","originalKeyword":"非晶Fe78Si9B13合金"},{"id":"5d205e07-d30e-4ba3-b0cd-dea65de46a9e","keyword":"低频脉冲磁场","originalKeyword":"低频脉冲磁场"},{"id":"209676e9-20e7-4d6b-b28d-bffb9f337b2e","keyword":"价电子结构","originalKeyword":"价电子结构"},{"id":"64bea100-4100-4c88-9a61-39ea19ac8bd0","keyword":"磁矩","originalKeyword":"磁矩"}],"language":"zh","publisherId":"xyjsclygc200910023","title":"磁致Fe78Si9B13非晶合金纳米晶化磁矩的理论计算","volume":"38","year":"2009"},{"abstractinfo":"采用聚焦脉冲激光研究了Ge2Sb2Te5薄膜在沉积和激光淬火两种非晶态下反射率与激光脉冲宽度变化的关系,发现沉积态的Ge2Sb2Te5薄膜在晶化触发阶段内的反射率随激光脉冲宽度增加而减小,经过激光淬火的非晶态Ge2Sb2Te5薄膜在晶化触发阶段内的反射率随激光脉冲宽度增加而变化平缓.本文借用气-液体系中过饱和度分析液滴形成的原理,从统计物理学角度详细研究了两种非晶态Ge2Sb2Te5薄膜在脉冲激光作用下的晶化过程及机理,结果表明,当Ge2Sb2Te5的非晶态程度处于未饱和或饱和状态时不形成晶核;当Ge2Sb2Te5的非晶态程度处于过饱和状态时,此时的Ge2Sb2Te5为亚稳态,可能形成大小不等的晶核,但只有半径大于临界晶核尺寸时才可能长大成晶粒.而应力降低晶化能垒,增加非晶态Ge2Sb2Te5的过饱和度是导致沉积态与激光淬火态的Ge2Sb2Te5薄膜在晶化触发阶段内反射率随激光脉冲宽度变化规律不一致的根本原因,并据此解释了Ge2Sb2Te5薄膜在这两种状态下的反射率随激光脉冲宽度的变化特点及规律.","authors":[{"authorName":"魏劲松","id":"93912a11-9526-4b23-9e80-88e960bebbd4","originalAuthorName":"魏劲松"},{"authorName":"阮昊","id":"5f40f373-234e-4efe-817c-149c9a0f0758","originalAuthorName":"阮昊"},{"authorName":"干福熹","id":"ef0bc33c-4fc2-4f5e-a079-839e6b4bae81","originalAuthorName":"干福熹"}],"categoryName":"|","doi":"","fpage":"1245","id":"23c02b59-ceaa-4f05-9d96-8c1bdfe44b24","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"f2a952f2-ca97-48d9-952b-910acf64d529","keyword":"Ge2Sb2Te5","originalKeyword":"Ge2Sb2Te5"},{"id":"6f3f7045-b608-4d16-bad4-0db40da6ed39","keyword":" thin films","originalKeyword":" thin films"},{"id":"7ad9a60b-fe05-4832-961b-a823d0b8f11e","keyword":" crystallization","originalKeyword":" crystallization"},{"id":"27c429e0-53c2-4652-b233-f9ab1257a837","keyword":" pulsed laser","originalKeyword":" pulsed laser"},{"id":"1b623122-4d46-4beb-b27b-6ae4ef967045","keyword":" super-saturation degree","originalKeyword":" super-saturation degree"}],"language":"zh","publisherId":"1000-324X_2002_6_19","title":"聚焦脉冲激光作用下Ge2Sb2Te5薄膜晶化过程及机理","volume":"17","year":"2002"},{"abstractinfo":"采用聚焦脉冲激光研究了Ge2Sb2Te5薄膜在沉积和激光淬火两种非晶态下反射率与激光脉冲宽度变化的关系,发现沉积态的Ge2Sb2Te5薄膜在晶化触发阶段内的反射率随激光脉冲宽度增加而减小,经过激光淬火的非晶态Ge2Sb2Te5薄膜在晶化触发阶段内的反射率随激光脉冲宽度增加而变化平缓.本文借用气-液体系中过饱和度分析液滴形成的原理,从统计物理学角度详细研究了两种非晶态Ge2Sb2Te5薄膜在脉冲激光作用下的晶化过程及机理,结果表明,当Ge2Sb2Te5的非晶态程度处于未饱和或饱和状态时不形成晶核;当Ge2Sb2Te5的非晶态程度处于过饱和状态时,此时的Ge2Sb2Te5为亚稳态,可能形成大小不等的晶核,但只有半径大于临界晶核尺寸时才可能长大成晶粒.而应力降低晶化能垒,增加非晶态Ge2Sb2Te5的过饱和度是导致沉积态与激光淬火态的Ge2Sb2Te5薄膜在晶化触发阶段内反射率随激光脉冲宽度变化规律不一致的根本原因,并据此解释了Ge2Sb2Te5薄膜在这两种状态下的反射率随激光脉冲宽度的变化特点及规律.","authors":[{"authorName":"魏劲松","id":"f95f193a-6332-4f75-b699-d9e46cea1cd6","originalAuthorName":"魏劲松"},{"authorName":"阮昊","id":"ca16ba37-bcd5-4be2-b516-d705fb36b843","originalAuthorName":"阮昊"},{"authorName":"干福熹","id":"60ca54ca-1994-4932-866f-26e06b672d6e","originalAuthorName":"干福熹"}],"doi":"10.3321/j.issn:1000-324X.2002.06.027","fpage":"1245","id":"673bc13b-2660-4bc6-a662-69e6b177968f","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"e2e4bc94-3e85-40d6-a97c-0cb40d3c3a11","keyword":"Ge2Sb2Te5","originalKeyword":"Ge2Sb2Te5"},{"id":"54e1bbea-8b53-4844-8ee7-831da849e3b6","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"4490d12a-9a34-4e38-acff-f149a829479a","keyword":"脉冲激光","originalKeyword":"脉冲激光"},{"id":"3d84182c-6f06-4618-8d89-d914685703f5","keyword":"晶化","originalKeyword":"晶化"},{"id":"df740e1c-d938-4d32-844c-8bc653f1d606","keyword":"过饱和度","originalKeyword":"过饱和度"}],"language":"zh","publisherId":"wjclxb200206027","title":"聚焦脉冲激光作用下 Ge2Sb2Te5薄膜晶化过程及机理","volume":"17","year":"2002"}],"totalpage":5396,"totalrecord":53953}