在微波等离子体化学气相沉积系统中,利用脉冲氮离子束溅射二氰二氨靶产生的碳氮粒子作为合成前驱物,在石英玻璃基片上研究了SiCN晶体的合成.用扫描电子显微镜(SEM)、X射线能谱(EDX)、X射线衍射(XRD)和X射线光电子能谱(XPS)研究了基片温度对薄膜的形貌、成分和结构的影响.结果表明:随着基片温度的降低,沉积物由截面为六方形的结晶良好的SiCN晶体(800℃)变成发育不完全的聚片状晶体(700℃),直到变成颗粒细小的无定形碳氮薄膜(550℃).衍射峰的强度以及晶胞参数a和c的值随温度的降低而减小.薄膜为C原子部分取代Si_3N_4中的Si原子位置而形成的SiCN晶体,其中N原子主要与Si原子结合,C原子以sp~3C-N、sp~2C=N和sp~2C=C键的形式存在.降低基片温度有利于提高薄膜中的C含量和sp~3C-N键的含量.
Crystalline silicon carbon nitrides were synthesized on quartz glass substrates by microwave plasma chemical vapor deposition,using precursors produced from a pulsed nitrogen ion beam sputtering dicyandiamide target.The effects of deposition temperature on the morphology,composition and structure of the samples were investigated by scanning electron microscopy,energy dispersive X-ray,X-ray diffraction and X-ray photoelectron spectroscopy.It is found that the surface morphologies of the deposits change from well crystallized hexagonal crystals at 800 ℃ to semi-developed multi-sheet crystals at 700 ℃ and to an amorphous solid with small grains at 550 ℃.The intensity of the diffraction peaks decreases and the values of the cell parameters a and c increase with the deposition temperature.The as-prepared crystalline films are silicon carbonitride with the crystalline structure of Si_3N_4 modified by replacing some of the Si atoms with C atoms.The N atoms are mainly bonded to Si,and C atoms are in the form of sp~3C-N,sp~2C=N and sp~2C=C bonds.Decreasing deposition temperature favors an increase of C atom content and sp~3C-N bond fraction.
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