对孪晶铜进行塑性应变幅控制下的疲劳实验, 研究了不同宽度的孪晶内疲劳位错组态及演化过程. 结果表明, 孪晶宽度不同时,孪晶内的疲劳位错组态不同. 当孪晶宽度大于1um时, 孪晶内疲劳位错组态与单晶中情况类似；孪晶宽度介于1um到200 nm之间时, 位错形成类PSBs结构；孪晶宽度介于200 nm到20 nm之间时, 孪晶内只能形成一些位错碎片；孪晶宽度小于20 nm时, 孪晶内没有稳定的晶格位错存在.
Symmetrical push-pull fatigue tests were conducted on as--electrodeposited polycrystalline twin copper. Different dislocation configurations were formed in twins with different widths. When the twin width $W_{\rm t} >1~ \mu$m, loop patches and walls were found in twins, the same as that in single crystal; when 1um>W>200 nm, ladder--like structures formed in twin, which like persistent slip bands (PSBs); when 200 nm>W>20 nm, only some dislocation fragments were found; when W<20 nm, no stable crystal dislocation segments exist in the twin.
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