摘要：在室温下，分别利用常规磁控溅射和反应磁控溅射技术交替沉积Si薄膜和Si1-xNx薄膜在单晶硅基体上制备了Si／Si1-xNx纳米多层膜。接下来，在高温下对Si／Si1-xNx多层膜进行退火诱发各层中形成硅纳米晶。研究了Si1-xNx层厚度和N2流量沉积对si／Si1-xNx多层膜中Si量子点形成的影响。TEM检测结果表明，N2流量为2．5mL／min时沉积的多层膜退火后形成了尺寸为20-30nm的等轴Si3N4纳米晶；N2流量为5．0mL／min时沉积的多层膜退火后在Si层和Si1-xNx层中均形成了硅纳米晶，而在7．5mL／min N2流量下沉积的Si／Si1-xNx多层膜退火后仅在Si层中形成了硅纳米晶。
Abstract： Si1-xNx multilayers were grown by alternating deposition of Si layer and Si1-xNx layer using magnetron sputtering and reactive magnetron sputtering under different N2 flows, and the post-deposition annealing of Si/Si1-xNx multilayers is performed. Transmission electron microscopy （TEM） was used to characterize the microstructure of muhilayers. The cross-sectional TEM reveales that the formation of Si3 N4 nanocrystallines for 2.5mL/min N2 flows and Si nanocrystallines are embedded in Si layers and Si1-xNx layers of muftilayers deposited under 5.0mL/min N2 flows and in Si layers of multilayers deposit at 7.5mL/min N2 flows.
参考文献
| [1] | Pavesi L;Dal Negro L;Mazzoleni C et al.[J].Nature,2000,408:440-444. |
| [2] | Bisi O;Ossicini S;Pavest L .[J].Surface Science Reports,2000,38(1-3):126. |
| [3] | Rong H S;Liu S H;Jones R et al.[J].Nature,2005,433:292-294. |
| [4] | Walters R J;Bourianoff G I;Atwater H A .[J].Nat Ma-ter,2005,4:143-146. |
| [5] | Conibeer G;Green M;Corkish R;Cho Y;Cho EC;Jiang CW;Fangsuwannarak T;Pink E;Huang YD;Puzzer T .Silicon nanostructures for third generation photovoltaic solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(0):654-662. |
| [6] | Conibeer G;Green M;Cho E C et al.[J].Thin Solid Films,2008,516(20):6748-6756. |
| [7] | Song DY;Cho EC;Conibeer G;Flynn C;Huang YD;Green MA .Structural, electrical and photovoltaic characterization of Si[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2008(4):474-481. |
| [8] | Park S;Cho E;Song D Y et al.[J].Solar Energy Materi-als&Solar Cells,2009,93(6-7):684-690. |
| [9] | Panchal A K;Solanki C S .[J].Journal of Crystal Growth,2009,311(09):2659-2663. |
| [10] | Tsutomu S I;Katsunori F;Setsuo N et al.[J].Journal of Applied Physics,1994,75(12):7779-7783. |
| [11] | Iwayama T S;Hama T;Hole D E.[J].Surface and Coatings Technology,2002(158-159):712-716. |
| [12] | Yun F;Hinds B J;Hatatani S et al.[J].Thin Solid Films,2000,375(1-2):137-141. |
| [13] | Morales-Sánchez A;Barreto J;Domínguez-Horna C et al.[J].Sensors and Actuators A:Physical,2008,142(01):12-18. |
| [14] | Heitmann J.;Scholz R.;Schmidt M.;Zacharias M. .Size controlled nc-Si synthesis by SiO/SiO2 superlattices[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2002(Pt.2):1075-1078. |
| [15] | Zacharias M;Heitmann J;Scholz R .[J].Applied Physics Letters,2002,80(04):661-663. |
| [16] | Yi LX;Scholz R;Zacharias M .Size and density control of Si-nanocrystals realized by SiOx/SiO2 superlattice[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2007(0):750-752. |
| [17] | Hao, XJ;Cho, EC;Flynn, C;Shen, YS;Park, SC;Conibeer, G;Green, MA .Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(2):273-279. |
| [18] | Brum J A .[J].Physical Review B:Condensed Matter,1991,43(14):12082-12085. |
| [19] | Lei X L;Wang X F .[J].Superlattices and Microstruc-tures,1993,13(02):185-187. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%