欢迎登录材料期刊网

材料期刊网

高级检索

目前,磁控溅射制备ZnO∶Al薄膜时的溅射压强较低,若氩气流量不稳或腔室排气口处气流扰动会对溅射压强产生较大影响,影响成膜质量.为提高溅射薄膜质量,采用直流磁控溅射技术,在较高溅射压强下,以不同辉光功率在柔性衬底聚酰亚胺上制备了ZnO∶Al薄膜.采用紫外可见分光光度计、四探针测试仪、X射线衍射仪及扫描电镜测试薄膜性能,考察了辉光功率对薄膜光学特性、电学特性、薄膜结构和表面形貌的影响.结果表明:制备的薄膜均为六方纤锌矿结构,且有明显的c轴择优取向;随着辉光功率的增大,方块电阻先减小后增大,辉光功率为50 W时最小,为15.6 Ω,晶粒尺寸先增大后减小;在辉光功率为50 W时,600 ~ 800 nm波长范围内薄膜的相对透射率达到最大值96%.

参考文献

[1] Tadatsugu Minami.New n-Type Transparent Conducting Oxides[J].MRS bulletin,20008(8):38-44.
[2] Pearton SJ;Norton DP;Ip K;Heo YW;Steiner T.Recent advances in processing of ZnO[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,20043(3):932-948.
[3] 林应斌;吴丽平;林銮;黄树铃;李钻钻;杨艳敏;黄志高.ZnO:Al透明导电薄膜的制备及其光电性能的研究[J].福建师范大学学报(自然科学版),2009(3):58-60.
[4] 赵佳明;边继明;孙景昌;张东;梁红伟;骆英民.柔性聚酰亚胺(PI)衬底上ITO薄膜的生长及其透明导电性能影响机制研究[J].功能材料,2011(z4):644-647.
[5] 刘丹;黄友奇.可用于沉积透明导电氧化物薄膜的柔性衬底研究进展[J].材料导报,2012(23):43-46.
[6] 黄稳;余洲;张勇;刘连;黄涛;闫勇;赵勇.AZO薄膜制备工艺及其性能研究[J].材料导报,2012(1):35-39.
[7] Xue-Yong Li;Hong-Jian Li;Zhi-Jun Wang;Hui Xia;Zhi-Yong Xiong;Jun-Xi Wang;Bing-Chu Yang.Effect of substrate temperature on the structural and optical properties of ZnO and Al-doped ZnO thin films prepared by dc magnetron sputtering[J].Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter,20092(2):247-252.
[8] Structural, electrical and optical properties of Al-Ti codoped ZnO (ZATO) thin films prepared by RF magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,20085 Pt.2(5 Pt.2):3175.
[9] 代海洋;陈镇平;冯雪磊;董群喜;李永.溅射功率对ZnO:Al薄膜光电性能的影响[J].真空,2012(4):55-58.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%