采用一步掩膜法通过射频磁控溅射设备同时制备源极、漏极以及沟道层,采用具有双电荷层效应的壳聚糖薄膜为栅介质,成功制备出以纸张为衬底的超低压薄膜晶体管.这种柔性衬底薄膜晶体管具有良好的电学性能:超低的工作电压(仅为0.8V),场效应迁移率达到8.1 cm2/(V·s),亚阈值斜率为80mV/decade,开关电流比高达1.2×107.
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