欢迎登录材料期刊网

材料期刊网

高级检索

回顾了国内外Zn<,1-x>Cd<,x>O合金带隙研究的发展历程,总结和归纳了近10年来关于Zn<,1-x>Cd<,x>O合金中CA原子分数x与E<,g>(eV)关系的数据及理论等研究成果.在此基础上,以近10年来文献中的试验数据作为分析样本,考虑多种情况对其进行回归拟合,并对不同拟合方法及Cd含量时E<,g>的影响进行了深入的分析讨论.建立了Cd含量x与E<,g>的经验关系式(x-E<,g>关系式).与试验值相比,使用新x-E<,g>关系式预测得到的E<,g>值与其符合得较好,表明所建立的关系式能比较准确地反映Zn<,1-x>Cd<,x>O合金中Cd含量x与E<,g>之间的关系.

参考文献

[1] Ryu YR.;White HW.;Kim WJ. .Fabrication of homostructural ZnO p-n junctions[J].Journal of Crystal Growth,2000(4):419-422.
[2] 张德恒,王卿璞,薛忠营.不同衬底上的ZnO薄膜紫外光致发光[J].物理学报,2003(06):1484-1487.
[3] 韩冬,张树朝.溶剂热法制备六角锥形ZnO及其光致发光性能[J].物理化学学报,2008(03):539-542.
[4] 孔祥荣,刘琳,邱晨,刘强,郑文君.氧化锌纳米棒的研究进展[J].材料导报,2009(05):105-108,113.
[5] Zhou Yu-Ming,He Yi-Gang,Lu Ai-Xia,Wan Qing.Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary[J].中国物理B(英文版),2009(09):3966-3969.
[6] W. I. Park;Gyu-Chul Yi;H. M. Jang .Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn_(1-x)Mg_(x)O(0≤x≤0.49) thin films[J].Applied physics letters,2001(13):2022-2024.
[7] Bhattacharya P;Das R R;Katiyar R S .Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films[J].Applied Physics Letters,2003,83(10):2010.
[8] Yan YF.;Pantelides ST.;Zhang SB. .Control of doping by impurity chemical potentials: Predictions for p-type ZnO[J].Physical review letters,2001(25):5723-5726.
[9] 张锡健,马洪磊,王卿璞,马瑾,宗福建,肖洪地,计峰.射频磁控溅射法生长MgxZn1-xO薄膜的结构和光学特性[J].物理学报,2005(09):4309-4312.
[10] 魏强,李梦轲,杨志,曹璐,张威,梁红伟.取向Zn1-xMgxO纳米线阵列的制备及光学特性[J].物理化学学报,2008(05):793-798.
[11] Makino T;Segawa Y;Kawasaki M et al.Band gap engineering based on Mg《xZn1-xO and CdxZn1-xO ternary alloy films[J].Applied Physics Letters,2001,78(09):1237.
[12] Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy[J].Applied Physics Letters,2003(16):3290-3292.
[13] 马德伟 .带隙可调的Zn1-xCxO合金半导体薄膜的研究[D].杭州:浙江大学,2004.
[14] X. J. Wang;I. A. Buyanova;W. M. Chen;M. Izadifard;S. Rawal;D. P. Norton;S. J. Pearton;A. Osinsky;J. W. Dong;Amir Dabiran .Band gap properties of Zn_(1-x)Cd_(x)O alloys grown by molecular-beam epitaxy[J].Applied physics letters,2006(15):151909-1-151909-3-0.
[15] Norris D J;Efros A L;Erwin S C .Doped nanocrystals[J].Science,2008,319:1776.
[16] Alivisatos AP .SEMICONDUCTOR CLUSTERS, NANOCRYSTALS, AND QUANTUM DOTS[J].Science,1996(5251):933-937.
[17] Yin Y;Alivisatos A P .Review article colloidal nanocrystal synthesis and the organic-inorganic interface[J].Nature,2005,437:664.
[18] Zúniga-Pérez J et al.Structural characterization of a-plane Zn1-xCdxO ,(0≤x≤0.085) thin films grown by metal-organic vapor phase epitaxy[J].Journal of Applied Physics,2006,99:023514.
[19] Vigil O;Vaillant L;Cruz F et al.Spray pyrolysis deposition of cadmium-zinc oxide thin films[J].THIN SOLID FILMS,2000,361-362:53.
[20] Choi Y S;Lee C G;Cho S M .Transparent conducting ZnxCd1-xO thin films prepared by the sol-gel process[J].THIN SOLID FILMS,1996,289:153.
[21] Tabet-Derraz H.;Benramdane N.;Nacer D.;Bouzidi A.;Medles M. .Investigations on ZnxCd1-xO thin films obtained by spray pyrolysis[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2002(3):249-259.
[22] Sakurai K.;Takagi T.;Kubo T.;Kajita D.;Tanabe T.;Takasu H.;Fujita S. .Spatial composition fluctuations in blue-luminescent ZnCdO semiconductor films grown by molecular beam epitaxy[J].Journal of Crystal Growth,2002(Pt.1):514-517.
[23] Ma D W;Ye Z Z;Huang J Y et al.Effect of post-annealing treatments on the properties of Zn1-x Cdx O films on glass substrates[J].Materials Science and Engineering B:Solid-state materials for advanced technology,2004,111:9.
[24] Junji Ishihara;Atsushi Nakamura;Satoshi Shigemori;Toru Aoki;Jiro Temmyo .Zn_(1-x)Cd_(x)O systems with visible band gaps[J].Applied physics letters,2006(9):091914-1-091914-2-0.
[25] Van Vechten J A;Bergstresser T K .Electronic structures of semconductor alloys[J].Physical Review B,1970,1(08):3351.
[26] Zhang XD;Guo ML;Li WX;Liu CL .First-principles study of electronic and optical properties in wurtzite Zn1-xCdxO[J].Journal of Applied Physics,2008(6):063721-1-063721-6-0.
[27] Wang Z J et al.First-principles study of structrural and corrected band properties of wurtzite Zn1-xCdx O and Zn1-x-MgxO systerns[J].Chinese Physics B,2009,18(07):2992.
[28] Yogeeswaran G;Chenthamarakshan CR;Seshadri A;de Tacconi NR;Rajeshwar K .Cathodic electrodeposition in the ternary Zn-Cd-O system: mixed (ZnO)(x)(CdO)(1-x) film formation versus Cd-doping of ZnO films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(4):2464-2470.
[29] Maiti U N et al.Structural,optical and photoelectron spectroscopic studies of nano/micro ZnO:Cd rods synthesized via sol-gel route[J].Journal of Sol-Gel Science and Technology,2007,41:87.
[30] 唐鑫,吕海峰,马春雨,赵纪军,张庆瑜.Cd掺杂纤锌矿ZnO电子结构的第一性原理研究[J].物理学报,2008(02):1066-1072.
[31] Lautenschlager P;Garriga M;Logotheitidis S et al.Interband critical points of Gais and their temperature dependence[J].Physical Review B,1987,35(17):9174.
[32] Guerrero-Moreno RJ.;Takeuchi N. .First principles calculations of the ground-state properties and structural phase transformation in CdO - art. no. 205205[J].Physical review, B. Condensed matter and materials physics,2002(20):5205-0.
[33] 孙慧卿,丁少锋,王雨田,邓贝,范广涵.CdO及CdxZn1-xO化合物的结构、能量和电子性能分析[J].物理化学学报,2008(07):1233-1238.
[34] Jaffe J E;Snyder J A;Lin Z J et al.LDA and GGA calculations for high-pressure phase transitions in ZnO and MgO[J].Physical Review B,2000,62(03):1660.
[35] 张志军,王发展,刘勃,原思聪.三元荆棘状Zn1-xCdxO纳米结构及其光致发光特性[J].物理化学学报,2008(10):1912-1916.
[36] 刘勃,王发展,张顾钟,赵超,原思聪.热蒸发法制备Zn1-x Cdx O纳米管及其生长机制研究[J].无机材料学报,2009(05):998-1002.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%