为了制备高质量的GaN纳米结构,采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜,然后在流动的氨气中进行氨化反应,成功制备出GaN纳米线.采用X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)对样品进行分析.研究结果表明,采用此方法得到了六方纤锌矿结构的GaN纳米线,且900℃时制备的纳米线质量最好,直径在60nm左右,长度达到十几微米.
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