材料期刊网

采用Sol-Gel工艺,在快速退火的工艺条件下制备了Bi₄Ti₃O₁₂铁电薄膜,研究了退火温度及时间、薄膜厚度对Bi₄Ti₃O₁₂薄膜的取向生长行为及其铁电性能、漏电流的影响,探讨了Bi₄Ti₃O₁₂薄膜取向生长的微观机制.结果表明:退火温度显著影响薄膜的c轴取向生长,其(00l)晶面的取向度F=(P-P₀)/(1-P₀)由550℃的0.081增加到850℃的0.827,退火时间对其(00l)晶面的取向度也有较大影响;经750℃以上温度退火处理的Bi₄Ti₃O₁₂薄膜呈高度c轴取向,对铁电性能有较明显的削弱作用;薄膜的漏电流密度随退火温度升高而增大,但薄膜的c轴取向生长有利于减缓漏电流密度的增长.

Polycrystalline Bi₄Ti₃O₁₂ thin films were successfully produced on p-Si substrates by sol-gel technique.
Effects of annealing temperature, annealing time, film thickness on the c-axis-oriented growth behavior, ferroelectric properties and leakage
current were studied. The results indicate that annealing temperatureshave remarkable influence on c-axis-oriented growth behavior with an
orientation factor of (00l) (F=(P-P₀)/(1-P₀)) from 0.081 at 550℃ to 0.827 at 850℃, and the annealing time has also influence on it.
Bi₄Ti₃O₁₂ thin films are highly c-axis-oriented over 750℃ of annealing temperature and the remanent polarization decreases with the
increase of the orientation factor of (00l). The leakage current densities of Bi₄Ti₃O₁₂ films increase with the ascending annealing temperature,
but the c-axise-oriented behavior helps to slow down the increase of the leakage current densities of Bi₄Ti₃O₁₂ films.