Si/SiO2超晶格是近年发展起来的一种新的Si基纳米结构,有着广阔的应用前景.该材料结构是通过选择合适的镀膜技术(如热反应蒸发、分子束外延),在衬底表面交替形成Si/SiO2纳米薄膜,对该结构热处理后形成Si/SiO2纳米结构.衬底温度、衬底材料、沉积薄膜厚度、应用的退火过程等均会影响超晶格中纳米Si的形成.具体分析了上述因素对形成纳米Si的影响.
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