研究了不经基体分离, 膜去溶-ICP-MS法直接测定高纯CeO2中14种痕量稀土杂质的分析方法, 讨论了Ce基体产生的多原子离子对被测元素的质谱干扰, 并且对影响多原子离子产率的因素进行了分析, 同时建立了Pr, Gd, Tb和Yb数学校正方程. 通过使用膜去溶雾化器和优化ICP-MS参数, 消除了CeH+, CeO2+和CeO2H+产生的质谱干扰, 将CeO/Ce产率降为0.008%, 同时结合数学校正方程彻底消除了CeO+, CeOH+和CeOH2+的质谱干扰. Pr, Gd, Tb和Yb的方法测定下限分别为0.08, 0.1, 0.15和0.008 μg · g-1, 14种稀土杂质方法测定下限和为0.75 μg · g-1. 99.999%高纯CeO2实际样品测定加标回收率为96%～103%, RSD为 1.2%～4.3%.
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