采用纯铪(Hf)金属靶,在氧+氩反应气氛中进行了HfO2薄膜直流反应磁控溅射沉积.首先在单晶硅片上沉积薄膜,研究工艺参数改变对薄膜的影响,然后选择较优的工艺在金刚石表面沉积符合光学厚度的薄膜,达到增透减反射效果.利用X射线光电子能谱(XPS)研究了O2/Ar比例对薄膜组成的影响.利用X射线衍射仪(GIXRD)和椭偏仪(Ellipsometer)研究了不同衬底温度对氧化铪薄膜组织结构和光学性能的影响.采用傅立叶红外光谱仪(FTIR)检测了镀膜前后金刚石红外透过性能,发现双面镀制HfO2薄膜能够有效提高金刚石在8～12 μm的红外透过性能,在8 μm处最大增透可达21.6%,使金刚石红外透过率达到88%;在3～5 μm范围,双面镀制了HfO2薄膜的金刚石平均透过率达66.8%,比没有镀膜的金刚石在该处的平均透过率54%高出12.8%.
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