利用射频磁控溅射法在Si(111)衬底上先溅射Mo中间层,再溅射Ga2O3薄膜,然后在氨气中退火合成了大量的一维棒状β-Ga2O3.X射线衍射、选区电子衍射和能量弥散谱的分析结果表明,制备的样品为β-Ga2O3.利用扫描电子显微镜和高分辨透射电子显微镜观察发现,合成的棒具有直而光滑的表面,其直径在70～200nm左右.室温光致发光谱显示出两个较强的蓝光发射.另外,简单讨论棒状β-Ga2O3的生长机制.
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