欢迎登录材料期刊网

材料期刊网

高级检索

利用扫描电镜、强度测试仪分析了高纯铜线与微Sn合金铜线不同热处理温度下组织结构及强度、伸长率的差异,研究了高纯铜线、微Sn合金铜线再结晶行为及微量合金元素Sn对高纯铜线再结晶温度的影响机理.结果表明:Sn原子与铜原子间的化学交互作用与弹性交互作用,引起高纯铜的点阵畸变,阻碍再结晶过程中铜的晶界迁移,抑制再结晶和晶粒长大,使微Sn合金铜线再结晶温度由高纯铜线的400℃提高至450℃,且高纯铜线在热处理过程中晶粒增长与热处理时间呈四次方关系;微量Sn合金减少了无空气焊球热影响区长度,热影响区长度由150 μm减少至120 μm.

参考文献

[1] S. Murali;N. Srikanth;Charles J. Vath III .Grains, deformation substructures, and slip bands observed in thermosonic copper ball bonding[J].Materials Characterization,2003(1):39-50.
[2] 曹军,丁雨田,卢振华,胡勇.组织和温度对Cu表面氧化速率的影响[J].材料热处理学报,2011(12):147-150.
[3] Jun-hui Li;Lei Han;Ji-an Duan .Microstructural characteristics of Au/Al bonded interfaces[J].Materials Characterization,2007(2):103-107.
[4] Li Junhui;Wang Ruishan;He Hu;Wang Fuliang;Han Lei;Zhong Jue .The law of ultrasonic energy conversion in thermosonic flip chip bonding interfaces[J].Microelectronic engineering,2009(10):2132-2137.
[5] Li J H;Han L;Zhong J .Ultrasonic power features of wire bonding and thermosonic flip chip bonding in microelectronics packaging[J].Journal of Central South University of Technology,2008,15:684-688.
[6] H. Gaul;H. Reichl;M. Schneider-Ramelow .Analysis of the friction processes in ultrasonic wedge/wedge-bonding[J].Microsystem technologies,2009(5):771-775.
[7] C.J. Hang;W.H. Song;I. Lum;M. Mayer;Y. Zhou;C.Q. Wang;J.T. Moon;J. Persic .Effect of electronic flame off parameters on copper bonding wire: Free-air ball deformability, heat affected zone length, heat affected zone breaking force[J].Microelectronic engineering,2009(10):2132-2137.
[8] Hung F Y;Lui T S;Chen L H et al.An investigation into the crystallization and electric flame-off characteristics of 20 um copper wires[J].Microelectronics Reliability,2011,51(01):21-24.
[9] 曹军,丁雨田,郭廷彪.铜线性能及键合参数对键合质量的影响[J].材料科学与工艺,2012(04):76-79.
[10] Qin I;Cohen I M;Ayyaswamy P S .Ball size and HAZ as functions of EFO parameters for gold bonding wire[J].Advances in Electronic Packaging,1997,19(01):391-398.
[11] LIU Dong;CHEN Hai-bin;WONG Fei.Effect of heat affected zone on the mechanical properties of copper bonding wire[A].,2011:1523-1528.
[12] Z.W. Zhong;H.M. Ho;Y.C. Tan;W.C. Tan;H.M. Goh;B.H. Toh;J. Tan .Study of factors affecting the hardness of ball bonds in copper wire bonding[J].Microelectronic engineering,2007(2):368-374.
[13] 毛卫民;赵新兵.金属的再结晶与晶粒长大[M].北京:冶金工业出版社,1994
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%