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金刚石作为自然界中热导性最好的材料,在半导体行业的应用越来越广泛.随着LED行业的不断发展,金刚石芯LED也崭露头角.综述了自20世纪50年代以来,金刚石材料作为衬底和外延材料在半导体光电子领域的研究进展.主要从两个方面展开论述:金刚石作为衬底外延GaN的研究进展;以及金刚石本身作为外延材料制备成p-n结、p-i-n结、异质结等半导体器件的研究进展.这些研究充分体现了金刚石材料应用在LED产品中的可行性和优越性,以及应用在大功率LED芯片中的巨大潜力.

参考文献

[1] Kinik Company .Diamond substrate and method for fabricating the same[P].China Taiwan,06290725.8,2006-05-05.
[2] Pope B J;Horton M D;Hall H T.Sintered diamond:Its possible use as a high thermal conductivity semiconduction device substrate[M].Kyoto:Phys-Chem Soc of Jpn,1975:404.
[3] 董夏兰;李延欣;孙家钟 .金刚石薄膜生长条件气相反应的动力学分析[J].计算物理,1996,13(04):439.
[4] Liu L.;Edgar JH. .Substrates for gallium nitride epitaxy [Review][J].Materials Science & Engineering, R. Reports: A Review Journal,2002(3):61-127.
[5] Group4 labs .World's first GaN-on-diamond transistor developed[EB/OL].http://www.wirelessdesignonline.com/article.mvc/Worlds-First-GaN-on-Diamond-Transistor-Develo-0001,2012-03-02.
[6] Hageman PR.;Schermer JJ.;Larsen PK. .GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):9-13.
[7] Hogan H .Thin layers of GaN deposited on synthetic diamond substrates[J].Photonics Spectra,2006,40(04):20.
[8] Chen P. H.;Lin C. L.;Liu Y. K.;Chung T. Y.;Liu C.-Y. .Diamond Heat Spreader Layer for High-Power Thin-GaN Light-Emitting Diodes[J].IEEE Photonics Technology Letters,2008(10):845-847.
[9] GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy[J].Journal of Crystal Growth,2009(21):4539.
[10] Gogova, D;Albrecht, M;Remmele, T;Irmscher, K;Siche, D;Rost, HJ;Schmidbauer, M;Fornari, R;Yakimova, R .Microscopic lateral overgrowth by physical vapour transport of GaN on self-organized diamond-like carbon masks[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,2009(10):1078-1082.
[11] van Dreumel G W G;Buijnsters J G et al.Growth of GaN on nano-crystalline diamond substrates[J].Diamond and Related Materials,2009,18(5-8):1043.
[12] Chen C J;Chen C M;Horng R H et al.Thermal management and interfacial properties in high-power GaN-based light-emitting diodes employing diamond-added Sn-3wt.%Ag-0.5wt.%Cu solder as a die-attach material[J].Journal of Electronic Materials,2010,39(12):2618.
[13] Francis D;Faili F;Babi(c) D et al.Formation and characterization of 4-inch GaN-on-diamond substrates[J].Diamond and Related Materials,2010,19(2-3):229.
[14] Polyakov A Y;Markov A V;Duhnovsky M P et al.GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide[J].J Vacuum Sci Techn B:Microelectron Nanometer Struct,2010,28(05):1011.
[15] Zhang D;Bai Y Z;Qin F W et al.Deposition of GaN films on freestanding CVD thick diamond films[J].Materials Science Forum,2010,654-656:1740.
[16] Kuzmik J;Bychikhin S;Pogany D et al.Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond[J].Journal of Applied Physics,2011,109(08):086106.
[17] Custers J F H .Unusual phosphorescence of a diamond[J].Physica,1952,18(8-9):489.
[18] Custers J F H .Semiconductivity of a type Ⅱ b diamond[J].Nature,1955,176:173.
[19] Wolfe R;Woods J .Electroluminescence of semiconduction diamonds[J].Physical Review,1957,105:921.
[20] Kim SB;Wager J F .Diamond-like carbon films for electroluminescent applications[J].Surface and Coatings Technology,1990,43-44:99.
[21] Okano K;Kiyota H;Iwasaki T et al.P-n junction diode made of semiconducting diamond films[J].Applied Physics Letters,1991,8(08):840.
[22] Borst T H;Strobel S;Weis O et al.High-temperature diamond p-n junction:B-doped homoepitaxial layer on N-doped substrate[J].Applied Physics Letters,1995,67(18):2651.
[23] Koizumi S;Watanabe K;Hasegawa M et al.Ultraviolet emission from a diamond p-n junction[J].Science,2001,292(5523):1899.
[24] Koide Y .Peculiarity of depletion region in diamond pn-junction[J].Japanese journal of applied physics,2003(11):6800-6803.
[25] Tajani A;Tavares C;Wade M;Baron C;Gheeraert E;Bustarret E;Koizumi S;Araujo A .Homoepitaxial {111}-oriented diamond pn junctions grown on B-doped Ib synthetic diamond[J].Physica Status Solidi, A. Applied Research,2004(11):2462-2466.
[26] Makino T;Kato H;Ogura M et al.Strong excitonic emission from(001)-oriented diamond p-n junction[J].Japanese Journal of Applied Physics,2005,44(37-41):L1190.
[27] Makino T;Kato H;Ri S G et al.Electrical and optical characterizations of(001)-oriented homoepitaxial diamond p-n junction[J].Diamond and Related Materials,2006,15(4-8):513.
[28] Makino S G;Kato T H;Ri S G et al.Homoepitaxial diamond p-n+ junction with low specific on-resistance and ideal built-in potential[J].Diamond and Related Materials,2008,17(4-5):782.
[29] Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity[J].Applied physics express,2008(1):97-99.
[30] Koizumi S;Kono S.Efficient NEA cathode operation of diamond pn junction[A].Miyazaki,2009
[31] Garino Y;Teraji T;Lazea A et al.Forward tunneling current in { 111}-oriented homoepitaxial diamond p-n junction[J].Diamond and Related Materials,2012,21:33.
[32] Melnikov AA.;Zaitsev AM.;Shulenkov A.;Varichenko VS. Filipp AR.;Dravin VA.;Kanda H.;Fahrner WR.;Denisenko AV. .Electrical and optical properties of light-emitting p-i-n diodes on diamond[J].Journal of Applied Physics,1998(11):6127-6134.
[33] Makino T;Tokuda N;Kato H et al.Electrical and light-emitting properties of(001)-oriented homoepitaxial diamond p-i-n junction[J].Diamond and Related Materials,2007,16(4-7):1025.
[34] Kazuihiro Oyama;Sung-Gi Ri;Hiromitsu Kato;Masahiko Ogura;Toshiharu Makino;Daisuke Takeuchi;Norio Tokuda;Hideyo Okushi;Satoshi Yamasaki .High performance of diamond p~(+)-i-n~(+) junction diode fabricated using heavily doped p~(+) and n~(+) layers[J].Applied physics letters,2009(15):152109-1-152109-2-0.
[35] Daisuke Takeuchi .Electron Emission from a Diamond (111) p-i-n~+ Junction Diode with Negative Electron Affinity during Room Temperature Operation[J].Applied physics express,2010(4):P.041301.1.
[36] Kazuhiro Oyama;Sung-Gi Ri;Hiromitsu Kato;Daisuke Takeuchi;Toshiharu Makino;Masahiko Ogura;Norio Tokuda;Hideyo Okushi;Satoshi Yamasaki .Carrier transport of diamond p~+-i-n~+ junction diode fabricated using low-resistance hopping p~+ and n~+ layers[J].Physica status solidi, A. Applications and materials science ePSS,2011(4):937-942.
[37] Tomikawa T;Nishibayashi Y;Shikata S et al.P-n-junction diode by B-doped diamond heteroepitaxially grown on Si-doped C-Bn[J].Diamond and Related Materials,1994,3(11-12):1389.
[38] Phetchakul T;Kimura H;Akiba Y et al."Backward diode"characteristics of p-type diamond n-type silicon heterojunction diodes[J].Japanese Journal of Applied Physics,1996,35(08):4247.
[39] Spitsyn B V;Hsu W L;Gorodetsky A E et al.AlN heteroepitaxial and oriented films grown on(111),(110) and(100) natural diamond faces[J].Diamond and Related Materials,1998,7(2-5):356.
[40] Miskys C R;Garrido J A;Nebel C E et al.AlN/diamond heterojunction diodes[J].Applied Physics Letters,2003,82(02):290.
[41] Wang C X;Yang G W;Gao C X et al.Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction[J].Carbon,2004,42(02):317.
[42] Shi K;Li D B;Song H P et al.Determination of InN/diamond heterojunction band offset by X-ray photoelectron spectroscopy[J].Nanoscale Res Lett,2011,6:50.
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