欢迎登录材料期刊网

材料期刊网

高级检索

采用化学气相沉积法,以SiO2/Si为衬底、镍膜为催化层,研究不同催化层厚度对石墨烯生长的影响.选择拉曼光谱,透射电子显微镜等手段对石墨烯的层数和质量进行表征.结果表明,随着Ni膜厚度的增加,石墨烯的缺陷减小,而且层数也减少,当Ni膜厚度为300 nm时,可以在SiOJSi基板上获得高质量的单层石墨烯.

参考文献

[1] Changgu Lee;Xiaoding Wei;Jeffrey W. Kysar;James Hone.Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene[J].Science,20085887(5887):385-388.
[2] Chen JH;Jang C;Xiao SD;Ishigami M;Fuhrer MS.Intrinsic and extrinsic performance limits of graphene devices on SiO2[J].Nature nanotechnology,20084(4):206-209.
[3] Nair RR;Blake P;Grigorenko AN;Novoselov KS;Booth TJ;Stauber T;Peres NM;Geim AK.Fine structure constant defines visual transparency of graphene.[J].Science,20085881(5881):1308-1308.
[4] Qingkai Yu;Jie Lian;Sujitra Siriponglert;Hao Li;Yong P. Chen;Shin-Shem Pei.Graphene segregated on Ni surfaces and transferred to insulators[J].Applied physics letters,200811(11):113103-1-113103-3-0.
[5] Peter Sutter;Jerzy T. Sadowski;Eli Sutter.Graphene on Pt(111): Growth and substrate interaction[J].Physical review, B. Condensed matter and materials physics,200924(24):245411:1-245411:10.
[6] Su, C.-Y.;Lu, A.-Y.;Wu, C.-Y.;Li, Y.-T.;Liu, K.-K.;Zhang, W.;Lin, S.-Y.;Juang, Z.-Y.;Zhong, Y.-L.;Chen, F.-R.;Li, L.-J..Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition[J].Nano letters,20119(9):3612-3616.
[7] Ismach, A.;Druzgalski, C.;Penwell, S.;Schwartzberg, A.;Zheng, M.;Javey, A.;Bokor, J.;Zhang, Y..Direct chemical vapor deposition of graphene on dielectric surfaces[J].Nano letters,20105(5):1542-1548.
[8] Kato, T.;Hatakeyama, R..Direct growth of doping-density-controlled hexagonal graphene on SiO _2 substrate by rapid-heating plasma CVD[J].ACS nano,201210(10):8508-8515.
[9] Peng, Z.;Yan, Z.;Sun, Z.;Tour, J.M..Direct growth of Bilayer graphene on SiO_2 substrates by carbon diffusion through nickel[J].ACS nano,201110(10):8241-8247.
[10] Kongara M. Reddy;Andrew D. Gledhill;Chun-Hu Chen;Julie M. Drexler;Nitin P. Padture.High quality, transferrable graphene grown on single crystal Cu(111) thin films on basal-plane sapphire[J].Applied physics letters,201111(11):113117-1-113117-3.
[11] Gupta A;Chen G;Joshi P;Tadigadapa S;Eklund PC.Raman scattering from high-frequency phonons in supported n-graphene layer films[J].Nano letters,200612(12):2667-2673.
[12] Ni ZH;Wang HM;Kasim J;Fan HM;Yu T;Wu YH;Feng YP;Shen ZX.Graphene thickness determination using reflection and contrast spectroscopy[J].Nano letters,20079(9):2758-2763.
[13] Chen, S.;Cai, W.;Piner, R.D.;Suk, J.W.;Wu, Y.;Ren, Y.;Kang, J.;Ruoff, R.S..Synthesis and characterization of large-area graphene and graphite films on commercial Cu-Ni alloy foils[J].Nano letters,20119(9):3519-3525.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%