采用直流反应磁控溅射法在不同基片上制备了80nm和1000nm厚的氧化钒薄膜.采用X射线衍射仪、原子力显微镜及扫描电镜进行了薄膜微观结构分析.结果表明,薄膜的晶化受衬底影响较大,晶化随膜厚的增加而增强.不同衬底上生长的薄膜晶粒尺寸存在较大差异,Si_3N_4/Si衬底上生长的薄膜晶粒细小,薄膜较为平坦;玻璃衬底、Si衬底和α-Al_2O_3陶瓷衬底上生长的薄膜晶粒较为粗大.随着膜厚的增加,薄膜的晶粒尺寸明显增大,不同衬底上生长的二氧化钒薄膜晶粒都具有一种独特的"纺锤"形或"棒"形.
Vanadium oxide thin films with thickness of 80nm and 1000nm are prepared by DC reactive magnetron sputtering. Analysis of the films microstructure is made by X-ray diffraction, atomic force microscope, and scanning microscope. The analysis reveals that crystalline extent of the films is correlated with the substrates adopted, and is enhanced with film thickness increasing. The substrates adopted have great influence on the films grain size. For the films grown on the glass substrate and the Si substrate, the film grain sizes are smaller and the film surfaces are smoother than those grown on the Si_3N_4 substrate. For different substrates, the film grain sizes increase with film thickness increasing, and the grains have a particular "spindle-like" shape or "club-like" shape.
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