采用磁控溅射方法，制备了惣不同厚度Ru薄膜为籽晶层的CoCrPt-SiO2垂直磁记录薄膜。利用原子力显微镜(AFM)、透射电镜(TEM)分析 Ru 薄膜的结构和形貌，并悁究了其结构对CoCrPt-SiO2薄膜表面形貌、粗糙度及结构的愝响。结果表明，CoCrPt-SiO2记录层的晶粒尺寸和粗糙度均随着 Ru 籽晶层厚度的增加而增加，薄而粗糙的籽晶层适合于高密度磁记录介质。对于CoCrPt-SiO2记录层晶粒的优化，厚度为70 nm的Ru籽晶层有利于记录层薄膜晶粒的完全隔离，从而提高了磁记录性能。
CoCrPt-SiO2 perpendicular recording films were prepared by the magnetron sputtering with a series of Ru films as the seed layer. The microstructure of Ru seed layers and their effects on the grain size, roughness and surface morphology of CoCrPt-SiO2 granular films were also investigated. It was found that the microstructure of seed layer obviously affected the structure and grain isolation of recording layers. The grain size and roughness of CoCrPt-SiO2 recording layer increased with the increase of the thickness of Ru seed layer. The thin and rough Ru seed layer could be used for the high-density magnetic recording media, but the Ru seed layer with a proper thickness of 70 nm facilitated a perfect isolation, and consequently excellent magnetic properties could be acquired for the final products.
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