采用传统固相反应法,将ZnO-B2O3(ZB)与1 100℃预烧的CaCu3Ti4Ol2(CCTO)粉末混合烧结成陶瓷.探讨ZB对CCTO陶瓷显微结构和介电性能的影响,并进一步分析CCTO陶瓷的巨介电机理.结果表明:当添加少量ZB(w≤2%,质量分数)时,形成体心立方BCC类钙钛矿结构的CCTO单相;当w>2%时,生成Zn2TiO4杂相;当ZB的添加量为0.5%和10%时,CCTO陶瓷的介电常数明显增大,介电损耗也较高;而当ZB的添加量为1.0%～5.0%时,介电常数的变化很小,同时具有较低的损耗和良好的温度稳定性.其中,w=2%时CCTO基陶瓷具有优异的介电性能(100kHz),即相对介电常数εr=336,介电损耗tanδ=0.018,介电常数温度系数τs=-1.5×10-5℃-.ZB掺杂CCTO基陶瓷的阻抗谱表明:CCTO陶瓷由半导体化晶界和相对绝缘的晶粒构成,因此,其具有巨介电常数.
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