以Ag、Bi、Sb、Te为原料在1373K真空熔炼合成了AgxBi0.5Sb1.5-xTe3(x=0～0.5)合金.微观组织和结构分析显示,真空熔炼的合金具有层状组织特征,属R3m晶体结构,当x≥0.2时出现面心立方AgSbTe2相.电学性能测试表明,在300～580K温度范围内合金的电导率随温度升高而下降,掺Ag后合金的电导率明显提高,掺Ag量为x=0.1试样的最大值达到2.3×105S/m.材料的Seebeck系数均为正值,表明掺Ag合金为p型半导体.
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