本文分析了以Lanxide技术合成AlN的生长过程，发现AlN晶体生长具有明显的方向性，XRD分析表明：AlN晶体的生长方向为[0001]晶向.反应过程中AlN由基体表面向气氛中不断深入生长，形成了纤维状或称柱状晶体组织.反应初期Mg元素的挥发非常强烈，Mg蒸气参与表面反应，生成一层疏松的复相表层，有利于反应的深入进行.氮化过程中Si元素存在富集现象，造成宏观组织的成份不均匀性.
The growth process of AlN synthesized by Lanxide method was studied. XRD analysis shows that AlN crystal grows in a specific direction [0001]. During nitridation, AlN crystal grew from the metal base surface toward atmosphere, then formed a parallel and rod-like microstructure. Durillg initia1 reaction, there was a significant Mg-evaporation phenomenon, and magnesium gas reacted with nitrogen or oxygen to form a porous and loosen surface layer. It was also found that there was a Si-rich process during nitridation which caused composition unhomogenity in product.
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