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透明导电薄膜的厚度制约其光电性质。本研究利用磁控溅射技术制备了厚度变化范围为200-1500nm的ITO薄膜,探索了薄膜颜色、可见光透过率、面电阻与膜厚的关系。薄膜颜色随着膜厚的增加呈现有规律的变化,可见光透过率随薄膜厚度的增加而呈现振荡下降趋势,并出现了极大值(紫红色),振荡趋势可用多光束干涉解释;薄膜面电阻随膜厚的增加呈减小趋势,薄膜厚度为1387nm时,面电阻为1.3Ω/□,薄膜最小电阻率为1.8×10-4Ω.cm。文章给出了可以通过选择恰当的薄膜厚度,以尽可能满足透明导电薄膜面电阻、透过率两个相互矛盾的指标。

The optical and electrical properties of thin film were influenced by the thickness.The thickness of the indium-tin-oxides(ITO) films range from 200nm to 1500nm were deposited by magnetron sputtering.The relationship between thickness and color,optical transmittance,sheet resistance was investigated.The color of thin film was changed by increasing the thickness.The optical transmittance dropped oscillation by increase of the thickness,and has maximum value(mauve color),the trend of oscillation conform to multi-beam interference condition.The square resistance of the film was reduced by increasing the film thickness.When the thickness of the thin film is 1387nm,the sheet resistance is 1.3Ω/□ and the minimum electrical resistivity is 1.8×10-4Ω·cm.This study showed that the optical transmittance and square resistance were controlled by the thickness of the thin film.

参考文献

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[2] 王德苗;黄士勇 等.真空和大气退火对ITO膜特性的影响[J].浙江大学学报,1997,31(04):533-538.
[3] Youn J Kim;Su B Jin et al.Study on the electrical propertiesof ITO films deposited by facing target sputter deposition[J].Journal of Physics D:Applied Physics,2009,42:075412.
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[5] 余刚,王慧,刘静.ITO薄膜光电性能红外-可见光谱分析方法[J].玻璃,2007(03):6-8.
[6] M.D. Benoy;E.M. Mohammed;Suresh Babu M;Binu P.J;B. Pradeep .Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activatedreactive evaporation[J].Brazilian journal of physics,2009(4):629-632.
[7] 陈丽菊,肖胜利,朱峰,任文辉.对光学薄膜反射率的讨论[J].太原师范学院学报(自然科学版),2005(03):77-78,81.
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