采用超声喷雾法制备了硫化铟(In2S3)薄膜,并考察了后续快速热处理(rapid thermal process,RTP)对硫化铟薄膜性能的影响.采用扫描电镜(SEM),X射线衍射(XRD)等手段对薄膜的形貌、结构、透射率等性质进行了表征.结果表明:超声喷雾法制备的In2S3,薄膜均匀致密,采用RTP热处理可提高薄膜的结晶性能,但对薄膜的透光性影响较小.通过计算可以得出薄膜的禁带宽度约为2.25～2.38 eV.
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