通过对室温下的本征氮化镓材料进行不同波长(360nm～377nm)的光照,分析了本征氮化镓中的持续光电导及其复合机制.实验的结果证明了两种持续光电导的特性:一种是快速的复合,而且分析表明关灯后这种复合机制导致的持续光电流下降幅度随着波长的增加而增加;另一种是速度较慢的复合,它的电流衰减幅度几乎不受波长的影响.基于这些现象,提出了一个可能的物理模型,认为第一种机制是由于导带电子被电子陷阱俘获而引起的,第二种是由于导带电子与空穴陷阱俘获的空穴之间的复合而造成的.
Persistent photoconductivity (PPC) and recombination mechanism were investigated in an intrinsic GaN at room temperature with incident photon wavelength from 360 nm to 377 nm. Experimental results reveal two main persistent features:a quickly recombination mechanism resulting in increasing of the PPC decay magnitude of the photocurrent with the increase of the incident wavelength, and a slower one, which dose not affect the decay magnitude of photocurrent when the incident wavelength changes. A physical model is proposed based on the two recombination mechanisms, the former mechanism may be related to the capture of conduction band electrons by deep electron traps, and the later is due to the recombination of electrons with holes trapped in hole traps.
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