以MgO-CeO2为烧结助剂,采用热压烧结工艺在1850C制备了SiC含量为80wt％的SiC-AlN复相陶瓷.研究了不同助剂含量对复相陶瓷致密性与导热性能的影响.结果表明:适量的烧结助剂能够对SiC-AlN复相陶瓷起到促进烧结作用.烧结助剂含量为6wt％时,样品显气孔率偏大;当助剂含量提高至8wt％～14wt％时,样品显气孔率显著降低,能够完全烧结致密化.复相陶瓷在烧结助剂含量为1Owt％时获得最佳的致密性,其显气孔率仅为0.14％.在烧结助剂含量为8wt％时,样品具有最高的热导率51.72 W·m-1·K-1.复相陶瓷的热导率主要受样品致密性和晶界相的影响,不足或过量的烧结助剂都会使样品的热导率降低.
参考文献
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