利用磁控溅射在室温条件下沉积ITO薄膜和ITO-Zr薄膜,对比研究在空气中退火处理对ITO和ITO-Zr薄膜性能的影响.结果表明,Zr的掺杂促进了(400)晶面的取向,随着退火温度的升高,薄膜表面颗粒增大,表面粗糙度有所降低.室温下Zr的掺杂显著改善了薄膜的光电性能,随着退火温度的升高,ITO和ITO:Zr薄膜的方阻都表现为先降后升的趋势,ITO-Zr薄膜在较低的退火温度下可见光透过率就可达到80%以上,直接跃迁模型确定的光学禁带宽度Eg呈现了先升后降的变化.ITO:Zr薄膜比ITO薄膜显示了更高的效益指数,揭示了ITO-Zr薄膜具有更好的光电性能.
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