分别以SiO2微粉和Si3N4为硅源,炭黑为碳源,氧化硼为催化剂,采用碳热还原法在1500℃氩气气氛下合成了SiC晶须。通过透射电镜和扫描电镜对所合成SiC晶须的形貌和晶体结构特征进行了分析。结果表明,采用两种硅源所合成的晶须均为B—SiC单晶,晶须的生长面为(111)面,生长方向为[111]方向。两种硅源所合成的晶须形貌特点存在较大差别,表明其合成SiC晶须的生长机理不同,VLS生长和螺旋位错的延伸生长可以分别用来解释以SiO2微粉为硅源和以Si3N4为硅源合成的晶须在形貌结构特征上的差别。
Using microsilica and Si3N4 as silicon sources, black carbon as carbon source, B2O3 as catalyst, SiC whiskers were synthesized under argon atmosphere at 1500℃ by carbothermal reduction method. Morphology and crystal structure of SiC whiskers were characterized by transmission electron microscope and scanning elec- tron microscope. The results show that the SiC whiskers synthesized lay using two kinds of silica sources are both/3-SIC single crystals, and the growth plane is (111) along the direction of [111]. The obvious differences in morphology indicate that there are different growth mechanisms of SiC whiskers synthesized by using differ- ent silica sources. VLS growth and screw dislocation growth are suitable to explain the differences in morpholo- gy of two kinds of SiC whiskers respectively.
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