利用磁控溅射法将Cu/Sn/ZnS前驱体沉积在钙钠玻璃基片上,再通过硫化该前驱体制备Cu2ZnSnS4薄膜.利用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、能谱仪、霍尔效应测量系统和紫外可见分光光度计研究了Cu2ZnSnS4薄膜的微观结构、表面形貌、化学成分、电学和光学性能.结果表明,CZTS薄膜的微观结构依赖于硫化温度和时间.在480℃硫化3h的薄膜为沿(112)晶面择优取向生长的纯相CZTS薄膜,该薄膜的禁带宽度是1.51 eV,其电阻率和载流子浓度分别为0.39 Ω·cm和4.07×1017 cm-3.
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