采用独特的快速循环纳米晶化技术,对直流磁控溅射制备的非晶CoNbZr软磁膜,进行纳米晶化.研究了在不同的纳米晶化工艺条件下,薄膜的微观结构和阻抗性能.CoNbZr软磁薄膜晶粒细化到30nm,阻抗值从20Ω增加到100Ω(1400MHz),阻抗共振峰向低频移动200MHz左右,极大改善了薄膜的软磁性能.
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