固态输送ZrCl4低压化学气相沉积制备ZrC涂层的特征

中国有色金属学报, 2012, 22(1): 171-178.

固态输送ZrCl4低压化学气相沉积制备ZrC涂层的特征

刘岗 ^1, , 李国栋 ^2, , 熊翔 ^3, , 王雅雷 ^4, , 陈招科 ^5, , 孙威 ^6,

1.中南大学粉末冶金国家重点实验室,长沙410083

2.中南大学粉末冶金国家重点实验室,长沙410083

3.中南大学粉末冶金国家重点实验室,长沙410083

4.中南大学粉末冶金国家重点实验室,长沙410083

5.中南大学粉末冶金国家重点实验室,长沙410083

6.中南大学粉末冶金国家重点实验室,长沙410083

关键词： ZrC涂层 , 温度 , 低压 , 化学气相沉积

Character of ZrC film prepared by transporting solid ZrCl4 during low pressure chemical vapor deposition

采用ZrCl4-CH4-H2-Ar反应体系、固态输送ZrCl4粉末低压化学气相沉积(CVD)制备ZrC涂层.研究温度对低压化学气相沉积ZrC涂层物相组成、晶体择优生长、涂层表面形貌、断面结构、涂层生长速度和沉积均匀性等方面的影响.结果表明:不同温度下沉积的涂层主要由ZrC和C相组成；随着温度的升高,ZrC晶粒(200)晶面择优生长增强,颗粒直径增大,表面致密性增加,沉积速率上升；涂层断面结构以柱状晶为主；随着离进料口距离的增加,涂层的沉积速率逐渐减小;1500℃时,沉积系统的均匀性比1450℃时的差.

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固态输送ZrCl4低压化学气相沉积制备ZrC涂层的特征

Character of ZrC film prepared by transporting solid ZrCl4 during low pressure chemical vapor deposition

参考文献