等离子体状态对PECVD SiC薄膜微结构的影响

功能材料, 2004, 35(1): 80-88.

等离子体状态对PECVD SiC薄膜微结构的影响

王静静 ^1, , 廖波 ^2, , 刘维 ^3, , 王波 ^4, , 宋雪梅 ^5, , 严辉 ^6,

1.北京理工大学,电子工程系,北京,100081

2.北京理工大学,电子工程系,北京,100081

3.北京工业大学,新型功能材料教育部重点实验室,北京,100022

4.北京工业大学,新型功能材料教育部重点实验室,北京,100022

5.北京工业大学,新型功能材料教育部重点实验室,北京,100022

6.北京工业大学,新型功能材料教育部重点实验室,北京,100022

基金项目: 国防科技预研跨行业综合技术项目(00J12.1.4.BQ119) 北京市自然科学基金(2992002)

关键词：工作气压 , 氢稀释度 , β-SiC , PECVD

Influence of the gas parameters on the structure of β-SiC films synthesized by PECVD

在PECVD法制备SiC薄膜过程中,深入研究了工作气压及工作气体中氢稀释比例对薄膜的影响,发现以上两个参数是通过共同调整等离子体状态的两个主要参数--等离子体成分及离子能量来起作用的.在此基础上,讨论了等离子体状态在SiC薄膜微结构从非晶转化为纳米晶过程中的作用,发现可以通过控制等离子体成分及离子能量来得到可用于场发射阴极的纳米晶SiC薄膜.

参考文献

[1]	Lee J;Hong B;Messier R et al.[J].Applied Physics Letters,1996,69:1716.
[2]	Kurt R;Bonard J M;Karimi A .[J].Diamond and Related Materials,2001,10:1962-1967.
[3]	Zhu W;Bower C;Kochanski G P et al.[J].Solid-State Electronics,2001,45:921-928.
[4]	Want Q H;Corrigan T D;Dai J Y .[J].Applied Physics Letters,1997,70:3308.
[5]	Chen DH.;Cheung WY.;Wu W.;Luo EZ.;Xu JB.;Wilson IH.;Kwok RWM.;Wong SP. .Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source[J].Applied physics letters,1998(15):1926-1928.
[6]	Bandis C;Pate B B .[J].Applied Physics Letters,1996,69:366.
[7]	Kleps I.;Stamatin I.;Correia A.;Gil A.;Zlatkin A.;Nicolaescu D. .Field emission properties of silicon carbide and diamond-like carbon (DLC) films made by chemical vapour deposition techniques[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1999(1):152-157.
[8]	Angelescu K A .[J].Surface Science Applications,2001,184:107-112.
[9]	Kerdiles S.;Gourbilleau F.;Perez-Rodriguez A.;Garrido B. Gonzalez-Varona O.;Morante JR.;Rizk R. .Low temperature direct growth of nanocrystalline silicon carbide films[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(0):530-535.
[10]	Le Normand F.;Pecoraro S.;Werckmann J.;Arnault JC. .Formation of beta-SiC nanocrystals on Si(111) monocrystal during the HFCVD of diamond[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(4):298-302.
[11]	Lee S W;Choi Y S;Moon J Y et al.[J].Journal of the Korean Physical Society,1999,34:562-566.
[12]	Sun Y.;Miyasato T. .Infrared absorption properties of nanocrystalline cubic SiC films[J].Japanese journal of applied physics,1998(10):5485-5489.
[13]	Ball P;Garwin L .[J].Nature,1992,355:761.
[14]	Boo J H;Yu K S;Lee M et al.[J].Applied Physics Letters,1995,66:3487.
[15]	Chayaharaq A;Kiuchi M;Kinomura A et al.[J].Japanese Journal of Applied Physics,1993,32:1287.
[16]	Anthony .[J].Journal of Vacuum Science and Technology,1990,41(04):1356.
[17]	Matsuda A;Tanaka K .[J].Journal of Non-Crystalline Solids,1997,97/98:1375.
[18]	Desalvo A.;Pirri CF.;Tresso E.;Rava P.;Galloni R.;Rizzoli R.;Summonte C.;Giorgis F. .OPTOELECTRONIC PROPERTIES, STRUCTURE AND COMPOSITION OF A-SIC-H FILMS GROWN IN UNDILUTED AND H-2 DILUTED SILANE-METHANE PLASMA[J].Journal of Applied Physics,1997(12):7973-7980.
[19]	Koh J;Lee Y H;Fujiwara H et al.[J].Applied Physics Letters,1998,73(11):1526.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

等离子体状态对PECVD SiC薄膜微结构的影响

Influence of the gas parameters on the structure of β-SiC films synthesized by PECVD

参考文献