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用改善的溶胶凝胶法制备铈掺杂钛酸锶钡(Ba_0.6Sr_0.4TiO_3, BST)薄膜,研究其结构与介电性能.X射线光电子能谱表明,铈掺杂显著地减少了薄膜表面非钙钛矿结构.但是,由于掺杂薄膜较薄且掺杂量小,X射线衍射结果未见明显变化.原子力显微镜结果表明,掺杂BST薄膜表面光滑致密.掺杂BST薄膜的介电性能大幅度提高,在40 V外加电压下介电调谐率达60.8%,零偏压下的介电损耗为0.0265.同时,就有关结构及介电性能改善的机制进行了讨论.

Cerium (Ce)-doped barium strontium titanate (Ba0.6Sr0.4TiO3, BST) films were prepared by improved Sol-gel method. The structure and dielectric properties of the films were studied. X-ray diffraction shows the Ce-doped BST films exhibit no obvious change in phase structure because the films are quite thin and the doping content of Ce is low. However X-ray photoelectron spectroscopy shows that the Ce-doped BST films display significant decrease in non-perovskited structure. Atomic force microscope presents that the Ce-doped BST films are smooth and dense. The dielectric properties measurement reveals that the Ce-doped BST films show marked improvement in dielectric properties. The tunability can reach 60.8% at 40 V, and the dielectric loss (tand) is 0.0265 at zero bias. Also, the related mechanism of Ce doping for improvement of structure and dielectric properties is presented.

参考文献

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