采用射频(RF)反应磁控溅射方法制备了具有原子级平滑表面的纳米AlN薄膜.利用傅立叶红外光谱(FTIR)、透射电子显微镜(TEM)、原子力显微镜(AFM)、卢瑟福背散射(RBS)等分析方法对不同实验条件下合成的AlN薄膜进行了表征,研究了不同沉积温度(室温约550℃)下的AlN薄膜的表面形貌特征和结晶特性,探讨了AlN薄膜表面形貌的变化规律及纳米薄膜的形成机制.分析结果显示:不同沉积温度下合成的AlN薄膜均具有原子量级平滑的表面,薄膜表面粗糙度(RMS)为0.2～0.4 nm,且不随沉积温度的增加而发生明显变化;薄膜的晶粒尺度为20～30nm,薄膜的折射率随沉积温度的增加而增加.
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