A MONTE CARLO SIMULATION OF SECONDARY ELECTRON AND BACKSCATTERED ELECTRON IMAGES IN SCANNING ELECTRON MICROSCOPY

金属学报(英文版), 2005, 18(3): 351-355.

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1.Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China

2.Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China

基金项目: USTC-HP Laboratory of High Performance Computing 国家自然科学基金(10025420,90206009)

A MONTE CARLO SIMULATION OF SECONDARY ELECTRON AND BACKSCATTERED ELECTRON IMAGES IN SCANNING ELECTRON MICROSCOPY

Keywords： Monte Carlo

A new parallel Monte Carlo simulation method of secondary electron (SE) and backscattered electron images (BSE) of scanning electron microscopy (SEM) for a complex geometric structure has been developed. This paper describes briefly the simulation method and the modification to the conventional sampling method for the step length. Example simulation results have been obtained for several artificial structures.

参考文献

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A MONTE CARLO SIMULATION OF SECONDARY ELECTRON AND BACKSCATTERED ELECTRON IMAGES IN SCANNING ELECTRON MICROSCOPY

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