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采用退火和电子辐照相结合的复合工艺方法,对ZnGeP2晶体进行生长后处理.采用傅里叶红外光谱仪(FTIR)和高阻仪(HRM)等,对经不同次序的复合工艺处理前后样品的红外透过率和电阻率进行了测试.结果表明,采用先退火后电子辐照的复合处理工艺,样品的红外透过率能得到明显的提高.

参考文献

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[2] Zawilski KT;Setzler SD;Schunemann PG;Pollak TM.Increasing the laser-induced damage threshold of single-crystal ZnGeP2[J].Journal of the Optical Society of America, B. Optical Physics,200611(11):2310-2316.
[3] Verozubova GA;Gribenyukov AI.Growth of ZnGeP2 crystals from melt[J].Crystallography reports,20081(1):158-163.
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[5] 张建强;赵北君;朱世富;陈宝军;何知宇;王志超;杨登辉;曹新玲;曹礼强.磷锗锌晶体的热处理研究[J].人工晶体学报,2013(3):392-396.
[6] Gehlhoff W.;Azamat D.;Hoffmann A..Donor centers in zinc germanium diphosphide produced by electron irradiation[J].Physica status solidi, B. Basic research,20031(1):151-154.
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