本文采用直流磁控溅射技术在玻璃衬底上制备了AZO／Cu、Cu／AZO和AZO／Cu／AZO三种复合结构多层膜，研究了生长温度对多层膜特性的影响，发现AZO／Cu双层薄膜具有最优的光电性能，其最佳生长温度为100～150℃。文中进一步考察了生长温度对AZO／Cu双层薄膜结构性能和表面形貌的影响，结果表明：合适的生长温度有利于改善AZO／Cu双层薄膜的晶体质量，进而提高其光电性能；150℃下沉积的薄膜具有最佳品质因子1．11×10^-2Ω^-1，此时方块电阻为8．99Ω／sq，可见光透过率为80％，近红外反射率约70％。本文在较低温度下制备的AZO／Cu双层膜具有较优的透明导电性和良好的近红外反射性，可以广泛应用于镀膜玻璃、太阳能电池、平板显示器等光电领域。
AZO/Cu bi-layer, Cu/AZO bi-layer, and AZO/Cu/AZO tri-layer films were prepared on glass substrates by DC magnetron sputtering at different temperatures. The comparative study of electrical and optical properties revealed that AZO/Cu hi-layer films possessed superior photoelectric properties among the three multilayer films, with optimized growth temperatures in the 100-150℃ range. Effects of growth temperature on the structural property and surface morphology of AZO/Cu bi-layer films were further investigated. Moderate growth temperatures could lead to high crystal quality of the films, and therefore improve the photoelectric properties. AZO/Cu bi-layer films grown at 150℃ had the highest figure of merit of 1.11×10^-2Ω^-1, with a low sheet resistance of 8.99 Ω/sq, high visible transmittance of 80%, and near infrared reflectance of about 70%. The combination of good transparent-conductive property, excellent nearinfrared reflectivity, and low-temperature deposition enables the AZO/Cu bi-layer films to be widely used in various fields such as coated glasses, solar cells, and flat panel displays.
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