利用电子显微分析技术对高Co含量的室温铁磁性半导体Zn 1-x Co x O 1-δ 进行了微观表征.证明了氧含量是决定Zn 1-x Co x O 1-δ薄膜微观结构和磁性能的重要因素. 在缺氧环境下, 薄膜由含有大量氧缺位的纤锌矿结构的Zn 1-x Co x O 1-δ纳米晶(直径约5 nm)和填充其间的Zn-Co-O非晶相组成, 两相对薄膜宏观磁性均有贡献; 在富氧的环境下, 非晶Zn-Co-O相消失, 出现了CoO反铁磁相, 纤锌矿结构Zn 1-x Co x O 1-δ中的氧缺位大量减少, 晶粒长大到10-20 nm, 室温铁磁性逐渐减弱, 直至消失.
The microstructure of the room temperature ferromagnetic semiconductor Zn1-xCoxO1-δ was investigated by analytical electron microscopy. The experimental results indicated that the oxygen content decided the microstructure and the magnetic property of Zn1-xCoxO1-δ. The films deposited under poor oxygen were consistent of 5nm nanocrystal wurtzite Zn1-xCoxO1-δ and amorphous Co. They were all ferromagnetic phases. The films deposited under rich oxygen were consistent of 10~20nm nanocrystal Zn1-xCoxO1-δ and antiferromagnetic phase CoO. The concentration of the oxygen vacancies was greatly reduced, and the room temperature ferromagnetism was greatly weakened and even disappeared.
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