光刻技术在半导体器件大规模生产中发挥重要作用.今天,多数先进半导体生产都已经应用ArF准分子激光浸润光刻技术.双重图像曝光和侧壁图像转移技术使ArF准分子激光浸润光刻技术延伸到32纳米半节距(HP)器件的制造成为可能.为了制造更小尺寸的器件,必须开发新的制造工艺.极端紫外线光刻是制造22纳米半节距甚至更小尺寸半导体器件的先进下一代光刻技术解决方案.另外,其他技术解决方案,如纳米压印光刻技术和无掩模直描光刻技术等也被考虑用于制造更小节点尺寸的器件,但是目前这些方案仅仅处在研发阶段,而且在现阶段就已经呈现出在大规模生产中的诸多困难.本文从材料的角度对光刻技术进行一个整体描述,并对光刻技术未来趋势进行讨论.
Optical lithography plays an important role within high volume manufacturing (HVM) of semiconductor devices.Most "State of the art" Fabs have implemented ArF immersion technology today.Double patterning,double exposure,and side-wall image transfer technology allow for the extension of ArF immersion into 32 nm half-pitch (HP) application.In order to fabricate finer patterns,it is necessary to develop new processes.EUV lithography is a leading next generation solution for 22 nm HP and beyond.In addition,alternative solutions such as nanoimprint lithography and mask-less technology are also being considered for advanced nodes,however,they are only in the development stage at this time and in their current state represent a lot of challenges for HVM.In this paper,an overview of lithography is described from the aspect of "Materials".Additionally,future trends in lithography will be discussed.
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