在酸性溶液中在透明导电玻璃(ITO)基体上电化学沉积Cu2O薄膜.通过实验研究了电沉积工艺条件对电沉积Cu2O薄膜的影响.X射线衍射(XRD)和扫描电镜(SEM)对薄膜的微观结构和表面形貌进行了分析.结果表明,水浴温度较高时,酸性镀液中Ac-HAc共轭缓冲体系的反应速率提高,可以有效抑制铜单质的生长;镀液中铜离子的浓度会影响工作电极表面铜离子的浓度梯度,使得Cu2O在不同镀液下形成不同方向的择优取向;在双电极条件下可以提高电沉积Cu2O薄膜的电流密度至4mA/cm2,远远高于文献报导在三电极体系下低于1mA/cm2的工作电流密度.生成的氧化亚铜薄膜具有多孔结构,禁带宽度Eg约为2.4eV.
参考文献
| [1] | Siripala W.;Desilva KTL.;Jayanetti JKDS.;Dharmadasa IM.;Perera LDRD. .STUDY OF ANNEALING EFFECTS OF CUPROUS OXIDE GROWN BY ELECTRODEPOSITION TECHNIQUE[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1996(3):251-260. |
| [2] | 周延春;Switzer J .[J].材料研究学报,1996,10:512-516. |
| [3] | Olsen L C;Addis F W;Miller W .[J].Solar Cells,1982,7(03):247-279. |
| [4] | Olsen L C;Bohara R C;Urie M W .[J].Applied Physics Letters,1979,34(01):47-49. |
| [5] | Weichman F L;Reyes J M .[J].Canadia Journal of Physics,1980,58(03):325-333. |
| [6] | Golden T D;Shumsky M G;Zhou Y C.[J].Chemistry of Materials,1996(08):2499-2504. |
| [7] | Wijesundera RP;Hidaka M;Koga K;Sakai M;Siripala W .Growth and characterisation of potentiostatically electrodeposited CU2O and Cu thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):241-246. |
| [8] | 陈志钢,唐一文,贾志杰,张丽莎,李家麟,余颖.导电玻片上氧化亚铜膜的电沉积和表征[J].无机材料学报,2005(02):367-372. |
| [9] | Tang Y;Chen Z;Jia Z et al.[J].Materials Letters,2005,59:434-438. |
| [10] | Mahalingam T.;Rajendran S.;Jayachandran M.;Chockalingam MJ.;Chitra JSP. .Galvanostatic deposition and characterization of cuprous oxide thin films[J].Journal of Crystal Growth,2000(1/4):304-310. |
| [11] | Georgieva V;Ristov M .[J].Solar Energy Materials & Solar Cells,2002,73:67273. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%