利用压电响应力显微术开展了PMN-PT弛豫铁电单晶铁电畴结构的三维极化取向成像、畴结构的不均匀性及极化状态稳定性机理的研究.揭示了纳米尺度畴结构的不均匀性源于纳米尺度极性微区的相互作用和无规场之间的共同调制,而单晶表面屏蔽电荷机制主要源于大气环境下水的溶解性吸附,该机制对PMN-PT单晶中畴状态的稳定性及材料最佳性能的发挥起着重要作用.
参考文献
| [1] | Service R F.[J].Science,1997:275,1878. |
| [2] | Park SE.;Shrout TR. .ULTRAHIGH STRAIN AND PIEZOELECTRIC BEHAVIOR IN RELAXOR BASED FERROELECTRIC SINGLE CRYSTALS[J].Journal of Applied Physics,1997(4):1804-1811. |
| [3] | Fu H;Cohen R E.[J].Nature,2000:403,281-283. |
| [4] | Tu C S;Tsai C L;Chen J S .[J].Physical Review B,2002,65:104113. |
| [5] | Priya S;Viehland D;Uchino K .[J].Applied Physics Letters,2002,80:4217-4219. |
| [6] | Yin J;Cao W .[J].Journal of Applied Physics,2002,92:444-448. |
| [7] | Xu G;Luo H;Yin Z .[J].Physical Review B,2001,64:020102. |
| [8] | Tu C S;Schmidt V H;Shih I T et al.[J].Physical Review B,2003,67:020102. |
| [9] | Lee J K;Yi J Y;Hong K S et al.[J].Journal of Applied Physics,2002,91:4474. |
| [10] | Gruverman A;Tokumoto H .[J].Nano Letters,2001,1:93-95. |
| [11] | Ganpule C S;Nagarajan V;Hill B K et al.[J].Journal of Applied Physics,2002,91:1477-1481. |
| [12] | Rosenman G;Urenski P;Agronin A et al.[J].Applied Physics Letters,2003,82:103-105. |
| [13] | Nagarajan V;Roytburd A;Stanishievskv A et al.[J].Nature Materials,2003,2:43-47. |
| [14] | Zeng H R;Li G R;Yin Q R et al.[J].Applied Physics A:Materials Science and Processing,2003,76:401-404. |
| [15] | Westphal V;Klweemann W;Glinchuk M D .[J].Physical Review Letters,1992,68:847-850. |
| [16] | Viehland D;Li J .[J].Journal of Applied Physics,2001,90:2995-3003. |
| [17] | Kalinin S V;Bonnell D A .[J].Physical Review B,2002,65:125408. |
| [18] | Hong S.;Shin H.;Jeon JU.;Pak YE.;Colla EL.;Setter N.;Kim E. No K.;Woo J. .Principle of ferroelectric domain imaging using atomic force microscope[J].Journal of Applied Physics,2001(2):1377-1386. |
| [19] | Kalinin S V;Johnson C Y;Bonnell D A .[J].Journal of Applied Physics,2002,91:3816-3823. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%