采用背散射电子取向成像、扫描电镜、X射线衍射等手段研究了CVD自支撑金刚石膜的宏观织构、微观组织及晶粒取向的演化过程. 薄膜制备时的气氛纯度较低, 这是引起本文金刚石膜中发现大量孪晶的一个重要原因. 杂质原子会降低金刚石的层错能, 从而降低孪晶界的形成障碍, 促进孪晶生成. 频繁的孪晶导致{100}织构转向{122}织构, 并弱化薄膜织构, 使性能趋向各向同性. {110}取向的晶粒孪晶后仍具有{110}取向, 因而在多重孪晶出现时仍可保持一定的稳定性.
The techniques of orientation mapping based on electron back-scattering diffraction, scanning electron microscopy and X ray diffraction were used to investigate macro-texture,
microstructure and orientation evolution of grains. The preparation atmosphere with lower purity is one of the important reasons, which
induces twins in large quantity in the diamond films investigated. The impurity atoms reduce the stack fault energy in diamond, lower the
obstacles to the formation of twin boundaries, and therefore accelerate the appearance of twins. Frequent twining results in the texture
transformation from {100} to {122}, a weakened film texture as well as the tendency leading to isotropic properties. The {110} oriented
grains keep their orientation after twinning, and therefore indicate certain orientation stability against the repeatedly twinning effects.
参考文献
| [1] | Telling R H, Field J E. Diamond and Related Materials, 1999, 8: 850-854. 奬re{[2] Sumiya H, Satoh S, Toda N. Diamond and Related Materials, 1997, 6: 1841-1846. [3] Uddin S, Seah K H W, Li X O, et al. Wear, 2004, 257: 751-759. [4] Geis M W. Appl. Phys. Lett., 1989, 55: 550-552. [5] Locher R, Wagner J, Fuchs F, et al. Diamond and Related Materials, 1995, 4: 678-683. [6] Menon P M, Clausing R E, Heatherly L, et al. Diamond and Related Materials, 1998, 7: 1201-1206. [7] Choi S J, Shin Y S. Applications of Diamond Films and Related Materials, New York: Elsevier Science Publishers, 1991. 527-531. [8] Klein C. Materials Research Bulletin, 1992, 27 (12): 1407-1414. [9] Hessner R, Schreck M, Geier S, et al. Diamond and Related Materials, 1995, 4: 405-410. [10] Jiang X, Paul M, Klages C P. Diamond and Related Materials, 1996, 5: 251-255. [11] Scardi P, Veneri S, Leoni M, et al. Thin Solid Films, 1996, 290-291: 136-142. [12] Sun H, Yu S, Jiang Z, et al. Diamond and Related Materials, 1996, 5: 1308-1312. [13] 毛卫民, 陈楠. 北京科技大学学报, 2000, 22: 259-261. [14] Lu F X, Tang W Z, Huang T B, et al. Diamond and Related Materials, 2001, 10: 1551-1558. [15] Takahashi H, Despres J F, Odawara O. Journal of Applied Physics, 1999, 85 (7): 3609-3613. [16] Lang T, Stiegler J, Kaenel Y, et al. Diamond and Related Materials, 1996, 5: 1171-1184. [17] Badzian A, Badzian T. Ceramics international, 1996, 22: 223-228. [18] Yin L, Li M, Cui J, et al. Diamond and Related Materials, 2002, 11: 268-272. [19] Stiegler J, Bergmaier A, Michler P, et al. Diamond and Related Materials, 1998, 7: 193-199. [20] 周灵平, 靳九成, 李绍禄, 等. 人工晶体学报, 1998, 27: 126-131. [21] Michler J, Stiegler J, Kaenel Y, et al. Journal of Crystal Growth, 1997, 172: 404-415. |
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