在Vt(111)/Ti/SiO2/Si(100)衬底上,用溶胶-凝胶法制备出多(Pb(1-x)/100Lax/100)Ti(1-x/4)/100O3(x=28,简称PLT28)薄膜.PLT28薄膜的平均晶粒尺寸为25～30 nm,薄膜均匀致密.PLT28薄膜在300 kV/cm电场作用下,自发极化强度(Ps)、剩余极化强度(Pr)和矫顽场(Ec)分别为11.9 μC/cm2、0.77 μC/cm2和8.1 kV/cm.在外加电场363 kV/cm时,PLT28薄膜的相对介电常数与介电调谐率高达1242%和68.4%.
参考文献
| [1] | Polla DL.;Francis LF. .Processing and characterization of piezoelectric materials and integration into microelectromechanical systems [Review][J].Annual review of materials research,1998(0):563-597. |
| [2] | Scott J F .[J].Ferroelectrics Review,1998,1:1. |
| [3] | Polla D L;Francis L F .[J].MRS Bulletin,1996,21:59. |
| [4] | Pu X H;Luo W G;Qiu P S et al.[J].Physical Status Solidi A Applied Research,2000,182:R10. |
| [5] | Yang Y S;Lee S J;Yi S et al.[J].Applied Physics Letters,2000,76(06):774. |
| [6] | Lee J Y;Lee B S .[J].Materials Science and Engineering,2001,B79:86. |
| [7] | Wu W B;Wong K H;Choy C L .[J].Journal of Vacuum Science and Technology,2000,A18(01):79. |
| [8] | Suki K;Qiu H;Shimada M et al.[J].Japanese Journal of Applied Physics,1999,38(2A):886. |
| [9] | Tang XG.;Luo WG.;Ding AL. .Surface morphology and chemical states of highly oriented PbZrO3 thin films prepared by a sol-gel process[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(2):148-154. |
| [10] | Kwok C K;Desu S B .[J].Journal of Materials Research,1993,8(02):339. |
| [11] | Xu B M;Ye Y H;Cross L E .[J].Applied Physics Letters,1999,74:3549. |
| [12] | 蒋力立,唐新桂,丁爱丽.退火温度对PZT薄膜电容器性能的影响[J].电子元件与材料,2002(04):3-5. |
| [13] | Chen S Y;Chen I W .[J].Journal of the American Ceramic Society,1994,77:2332. |
| [14] | Huang Z;Zhang Q;Whatmore R W .[J].Journal of Materials Science Letters,1998,17:1157. |
| [15] | Huang Z;Zhang Q;Whatmore R W .[J].Journal of Applied Physics,1999,85:7355. |
| [16] | Cross J S;Fujiki M;Tsukada M et al.[J].Journal of Materials Research,1999,14(11):4366. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%